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Alex Q. Huang

Researcher at University of Texas at Austin

Publications -  606
Citations -  24132

Alex Q. Huang is an academic researcher from University of Texas at Austin. The author has contributed to research in topics: Power semiconductor device & Thyristor. The author has an hindex of 68, co-authored 592 publications receiving 19774 citations. Previous affiliations of Alex Q. Huang include ASML Holding & Durham University.

Papers
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Proceedings ArticleDOI

A novel energy balanced variable frequency control for input-series-output-parallel modular EV fast charging stations

TL;DR: In this article, an isolated dual-active-bridge (DAB) based single-stage AC/DC converter was proposed, which has the power-factor correction (PFC) and zero-voltage switching (ZVS) functions over the full-load range.
Proceedings ArticleDOI

Modelling and control of a cascade-multilevel converter-based STATCOM for electric arc furnace flicker mitigation

TL;DR: In this article, the normalized model of a CMC-based STATCOM and an EAF model are introduced, and then a DQ-model based control strategy is proposed for flicker mitigation.
Proceedings ArticleDOI

SPETO: a superior power switch for high power, high frequency, low cost converters

TL;DR: In this article, a self-powered emitter turn-off thyristor (SPETO) was proposed to achieve optically controlled turn-on and turnoff, and all the internal power required is self-generated.
Proceedings ArticleDOI

High-frequency high-efficiency DC-DC converter for distributed energy storage modularization

TL;DR: In this article, a new concept of distributed energy storage device (DESD) module is proposed, where a few distributed high voltage gain, high frequency and high efficiency bi-directional DC-DC converters are integrated with small battery packs respectively to form DESD modules.
Journal ArticleDOI

Analysis of the turn-off failure mechanism of silicon power diode

TL;DR: In this paper, a series of simulations were carried out to investigate the failure mechanism of large area silicon power diodes, and it was found that under isothermal and homogeneity condition, the reverse bias safe operation area (RBSOA) is the same as the sustain-mode dynamic avalanche.