Alex Q. Huang

Abstract: This paper presents the development of a distribution network solid state transformer (SST) based on high voltage (13kV) SiC MOSFET and JBS diode. This distribution SST is composed with a medium voltage ac/dc rectifier, medium voltage medium frequency dc/dc converter and a low voltage inverter. It's able to be interfaced to 3.6kV distribution grid and output both a 400V dc and 240/120V ac. This paper presents the characterization of the high voltage SiC MOSFET devices, and the design of rectifier and dc/dc converter. The test results of its grid-connected operation including pre-charge, start up, regeneration, etc. are included to show the functionalities of the designed SST prototype.

TL;DR: A bidirectional LLC resonant converter is presented to replace the traditional DAB or DHB in SST application and can achieve higher efficiency with wider range of zero voltage switching, zero current switching and simpler control strategy, which makes it highly attractive for solid state transformer applications.

TL;DR: This paper presents a novel IGBT gate drive method which is easily implemented within the IGB gate driver for the PWM voltage source converters, and is highly cost effective in the low cost, open loop voltage source Converters, since no current sensor is required.

TL;DR: In this paper, a battery energy storage system (BESS) with STATCOM is proposed for smoothing intermittent power output of a large wind farm to facilitate 1/2h dispatching of the wind farm.

TL;DR: In this article, a high-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been fabricated and characterized for high-power high-frequency applications.