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Alexander Sigov

Researcher at Moscow State Institute of Radio Engineering, Electronics and Automation

Publications -  118
Citations -  1254

Alexander Sigov is an academic researcher from Moscow State Institute of Radio Engineering, Electronics and Automation. The author has contributed to research in topics: Ferroelectricity & Dielectric. The author has an hindex of 19, co-authored 108 publications receiving 1087 citations. Previous affiliations of Alexander Sigov include Bauman Moscow State Technical University.

Papers
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Book

Defects and Structural Phase Transitions

TL;DR: In this paper, elements of the theory of phase transition in perfect crystals, phase transition anomalies in imperfect crystals, and the space distribution of the order parameter induced by a point defect near the phase transition are discussed.
Journal ArticleDOI

Temperature-driven phase transformation in self-assembled diphenylalanine peptide nanotubes

TL;DR: In this article, the optical second harmonic generation and local piezoresponse as a function of temperature were examined for horizontal and vertical Diphenylalanine (FF) peptide nanotubes.
Journal ArticleDOI

Evidence of ferroelectricity and phase transition in pressed diphenylalanine peptide nanotubes

TL;DR: In this article, the dielectric and polarization properties of self-assembled peptide nanotubes (PNTs) are investigated and the results corroborate nanoscale study and present a clear evidence of ferroelectric-like behavior and phase transition in this technologically important material.
Book ChapterDOI

Piezoelectricity and Ferroelectricity in Biomaterials: From Proteins to Self-assembled Peptide Nanotubes

TL;DR: This chapter presents a short overview of the main issues of piezoelectricity and ferroelectricity, and their manifestation in organic and biological objects, materials and molecular systems.
Journal ArticleDOI

Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties

TL;DR: A short review of the works performed during the last few years in the field of the alkoxy-derived ferroelectric films is presented in this article, where the dependence of the dielectric permittivity of the films via the annealing temperature is reported.