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Alexei O. Orlov
Researcher at University of Notre Dame
Publications - 197
Citations - 6347
Alexei O. Orlov is an academic researcher from University of Notre Dame. The author has contributed to research in topics: Quantum dot cellular automaton & Coulomb blockade. The author has an hindex of 34, co-authored 191 publications receiving 5974 citations. Previous affiliations of Alexei O. Orlov include Russian Academy of Sciences & Technische Universität München.
Papers
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Journal ArticleDOI
Aluminum oxide tunnel barriers for single electron memory devices
TL;DR: Measurements on single electron memory devices where the memory island, a floating gate, is charged through aluminum oxide tunnel barriers show a definite threshold for tunneling through the oxide barriers indicating a potential for nonvolatile memory.
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Radio frequency operation of clocked quantum-dot cellular automata latch
TL;DR: In this paper, a single-electron latch based on Al-AlOx-Al tunnel junctions is presented, and the latch response indicates that high speed operation of pipelines, signal fan-out, and more complex logic devices are possible with this technology.
Proceedings Article
NanoMagnet logic
Wolfgang Porod,Peng Li,Faisal A. Shah,M. Siddiq,Edit Varga,György Csaba,Vijay K. Sankar,Gary H. Bernstein,X. Sharon Hu,Michael Niemier,Joseph J. Nahas,Alexei O. Orlov +11 more
TL;DR: In this paper, the binary states of a bit are represented by the magnetization state of a single-domain nanomagnet element, and logic is accomplished through direct physical interactions between them.
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Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
TL;DR: In this paper, the authors reported the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultrathin tunnel-transparent SiO2 in Ni-SiO2-Ni tunnel junctions.
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Using single-electron box arrays for voltage sensing applications
TL;DR: In this article, the authors demonstrate that by carefully choosing the operating point, the response to the voltage on the sensing gate can be enhanced, for small arrays scales, by a factor approaching N and, thus, provide a method by which these devices can be used in practical sensing applications, such as a scanning probe.