G
Golnaz Karbasian
Researcher at University of California, Berkeley
Publications - 24
Citations - 784
Golnaz Karbasian is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Atomic layer deposition & Ferroelectricity. The author has an hindex of 10, co-authored 22 publications receiving 446 citations. Previous affiliations of Golnaz Karbasian include Applied Materials & University of Notre Dame.
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Journal ArticleDOI
Enhanced ferroelectricity in ultrathin films grown directly on silicon.
Suraj Cheema,Daewoong Kwon,Daewoong Kwon,Nirmaan Shanker,Roberto dos Reis,Shang-Lin Hsu,Shang-Lin Hsu,Jun Xiao,Haigang Zhang,Ryan Wagner,Adhiraj Datar,Margaret McCarter,Claudy Serrao,Ajay K. Yadav,Golnaz Karbasian,Cheng-Hsiang Hsu,Ava J. Tan,Li Chen Wang,Vishal Thakare,Xiang Zhang,Apurva Mehta,Evguenia Karapetrova,Rajesh V. Chopdekar,Padraic Shafer,Elke Arenholz,Elke Arenholz,Chenming Hu,Roger Proksch,Ramamoorthy Ramesh,Jim Ciston,Sayeef Salahuddin,Sayeef Salahuddin +31 more
TL;DR: This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which ‘reverse’ size effects counterintuitively stabilize polar symmetry in the ultrathin regime.
Journal ArticleDOI
Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery
Korok Chatterjee,Sangwan Kim,Golnaz Karbasian,Ava J. Tan,Ajay K. Yadav,Asif Islam Khan,Chenming Hu,Sayeef Salahuddin +7 more
TL;DR: In this article, a nonvolatile single transistor ferroelectric gate memory device with ultra-thin Hf0.8Zr0.2O2 (HZO) fabricated using a self-aligned gate last process is presented.
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Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz
Ronghua Wang,Guowang Li,Golnaz Karbasian,Jia Guo,Bo Song,Yuanzheng Yue,Zongyang Hu,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Grace Xing +13 more
TL;DR: In this paper, the state-of-the-art In0.13Al0.83 Ga0.04N high-electron-mobility transistors with regrown ohmic contacts and T-gates on a SiC substrate have been fabricated.
Journal ArticleDOI
Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2
Golnaz Karbasian,Roberto dos Reis,Ajay K. Yadav,Ava J. Tan,Chenming Hu,Sayeef Salahuddin,Sayeef Salahuddin +6 more
TL;DR: In this paper, the stabilization of the ferroelectric phase in Hf0.8Zr0.2O2 with a tungsten capping layer was reported.
Journal ArticleDOI
InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and fT/fmax of 260/220 GHz
Ronghua Wang,Guowang Li,Golnaz Karbasian,Jia Guo,Faiza Afroz Faria,Zongyang Hu,Yuanzheng Yue,Jai Verma,Oleg Laboutin,Yu Cao,Wayne Johnson,Gregory L. Snider,Patrick Fay,Debdeep Jena,Huili Grace Xing +14 more
TL;DR: In this paper, an 11 nm quaternary In0.13Al0.04N barrier and a 5 nm In 0.05Ga0.95N channel on SiC substrates have been fabricated, and the as-processed HEMT structure features a channel electron density of 2.08×1013 cm-2 and a mobility of 1140 cm2 V-1 s-1.