Ivan Gueorguiev Ivanov

TL;DR: In this paper, the most intensive band in the Raman spectra at approximately 570 cm−1 has been assigned to electric field-induced Raman scattering on longitudinal optical phonons.

TL;DR: High-fidelity optical initialization and coherent spin control are demonstrated, which are exploited to show coherent coupling to single nuclear spins with ∼1 kHz resolution and makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.

TL;DR: In this paper, a two-step chemical bath deposition method was used to produce well-aligned ZnO nanorods on Si substrates and the structure and optical properties of the grown nanorod were investigated.

TL;DR: In this paper, a hot-wall type susceptor is proposed for the growth of high-quality epitaxial SiC films, which shows promising results in terms of high quality material grown at high growth rates.

TL;DR: In this paper, a high temperature chemical vapor deposition (HTCVD) was used for the epitaxial growth of silicon carbide and the growth rate was shown to be in the order of several tens of μm/h to 0.5 mm/h.