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Ali M. Darwish
Researcher at United States Army Research Laboratory
Publications - 98
Citations - 1390
Ali M. Darwish is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Amplifier & Monolithic microwave integrated circuit. The author has an hindex of 16, co-authored 96 publications receiving 1235 citations. Previous affiliations of Ali M. Darwish include Massachusetts Institute of Technology & University of Maryland, College Park.
Papers
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Subpicosecond gain and index nonlinearities in InGaAsP diode lasers
TL;DR: In this article, the gain and index nonlinearities in InGaAsP optical amplifiers operating in the 1.5 μm region of the spectrum were investigated using time domain reflectometry.
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Thermal resistance calculation of AlGaN-GaN devices
TL;DR: In this paper, an accurate closed-form expression for the thermal resistance of a multifinger AlGaN-GaN high electron-mobility transistor (HEMT) device on a variety of host substrates including SiC, Si, and sapphire, as well as the case of a single-crystal GaN wafer.
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Femtosecond index nonlinearities in InGaAsP optical amplifiers
TL;DR: In this article, femtosecond measurements of refractive index nonlinearities in diode laser amplifiers at 1.5 μm were obtained with a novel measurement technique, based on a time domain interferometer with heterodyne detection.
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Accurate determination of thermal resistance of FETs
TL;DR: In this article, an accurate closed-form expression for the thermal resistance of multifinger FET structures is presented based on the solution of Laplace's equations in prolate spheroidal coordinates and elliptical cylinder coordinates, which is verified by comparing the results with finite-element simulations, and experimental observations from liquid-crystal measurements and spatially resolved photoluminescence measurements.
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Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity
TL;DR: In this article, an enhanced, closed-form expression for the thermal resistance, and thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of the temperature-dependent thermal conductivity of GaN and SiC or Si substrates, is presented.