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Showing papers by "Amnon Yariv published in 1966"


Journal ArticleDOI
TL;DR: In this article, a formalism for describing optical parametric oscillation is developed, which is applied to the derivation of the oscillation threshold condition, power output, the Manley-Rowe conditions, index matching, and frequency tuning.
Abstract: A formalism for describing optical parametric oscillation is developed. The theory is applied to the derivation of the oscillation threshold condition, power output, the Manley-Rowe conditions, index matching, and frequency tuning.

74 citations


Journal ArticleDOI
TL;DR: Thermal tuning sensitivity and wedge-angle control with thermal gradients are analyzed and illustrated and low angle scattering is found to be an important factor influencing finesse and peak transmission.
Abstract: The use and analysis of solid Fabry-Perot etalons for interferometry and laser control are discussed and supported with experimental data. Low angle scattering is found to be an important factor influencing finesse and peak transmission. Thermal tuning sensitivity and wedge-angle control with thermal gradients are analyzed and illustrated. Control of laser oscillations using a solid-state etalon as a laser cavity end mirror is discussed. The use of the solid etalon as an optical cavity coupler is applied to the problem. of sideband energy removal from an internally modulated laser.

48 citations


Journal ArticleDOI
TL;DR: In this article, the electrooptic properties of a number of semiconductors were investigated, including ZnS and GaAs of the noncentrosymmetric 43m class.
Abstract: The electrooptic properties of a number of semiconductors were investigated. Of particular interest was the possibility of using these materials for modulation of infrared radiation, since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region. We have investigated experimentally the modulation potential of a number of semiconducting materials. These include ZnS and GaAs of the noncentrosymmetric 43m class. The electrooptic coefficients were determined by using a Co 2 , 10.6μ and a He-Ne 3.39 μ laser as the radiation source. Based on our experiments, GaAs appears as a suitable material for infrared modulation at \lambda > 10\mu .

39 citations


Journal ArticleDOI
TL;DR: In this article, a formalism for treating interactions between optical modes in the presence of time-varying parameters is developed, where the problems of parametric oscillation, frequency conversion, and internal laser modulation are treated.
Abstract: A formalism for treating interactions between optical modes in the presence of time-varying parameters is developed. The problems of parametric oscillation, frequency conversion, and internal laser modulation are treated, as well as a new class of interactions involving parametric modulation in the presence of negative losses.

21 citations


Journal ArticleDOI
TL;DR: The practical realization of the reverse process ran, heretofore, into the fol­ lowing difficulty: the performance of a lossless, and theoretically perfect, etalon can only approach its ideal behavior if the di­ vergence angle θ of the incident beam satisfies.
Abstract: The effect of mirror losses on the performance of Fabry-Perot etalons has been considered by numerous investigators. I n principle, this technique can be applied in reverse, so that the losses of the reflector and (or) those of the intervening medium can be inferred from the performance of the etalon. The practical realization of the reverse process ran, heretofore, into the fol­ lowing difficulty: the performance of a lossless, and theoretically perfect, etalon can only approach its ideal behavior if the di­ vergence angle θ of the incident beam satisfies Letters to the Editor should be addressed to the Editor, APPLIED OPTICS, AFCRL, Bedford, Mass. 01731

2 citations


Journal ArticleDOI
TL;DR: In this paper, the electrooptic properties of a number of semiconductors were investigated for modulation of infrared radiation (λ > 3µ), and the possibility of using these materials for modulation was explored.
Abstract: The electrooptic properties of a number of semiconductors were investigated. We were particularly interested in the possibility of using these materials for modulation of infrared radiation (λ > 3µ), since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region.

1 citations