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Amrita Bhattacharya
Researcher at Indian Institute of Technology Bombay
Publications - 34
Citations - 736
Amrita Bhattacharya is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Density functional theory & Phonon. The author has an hindex of 12, co-authored 31 publications receiving 605 citations. Previous affiliations of Amrita Bhattacharya include Indian National Association & Academy of Scientific and Innovative Research.
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Band gap engineering by functionalization of BN sheet
TL;DR: In this article, the stability and physical properties of single-layer BN sheet chemically functionalized by various groups, viz. H, F, OH, CH, CHO, CN, NH, etc., were investigated.
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Transition-Metal Decoration Enhanced Room-Temperature Hydrogen Storage in a Defect-Modulated Graphene Sheet
TL;DR: Using first-principles density functional calculations, a transition-metal-doped defected graphene sheet with periodic repetition of a C atom vacancy (Vc) can be used as a promising system for hydrogen storage as mentioned in this paper.
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Third conformer of graphane: A first-principles density functional theory study
TL;DR: In this article, the C-H bonds of a hexagon alternate in three-up-three-down fashion on either side of the sheet, which is called ''stirrup'' and has an intermediate stability between chair and boat conformers.
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Strain-induced band-gap deformation of H/F passivated graphene and h -BN sheet
TL;DR: In this article, band gap deformation for hydrogenated/fluorinated graphene and hexagonal BN sheet were investigated using first principles density functional calculations. And they found that the intrinsic strength of these materials under harmonic uniaxial strain, and that the in-plane stiffness of fluorinated and hydrogenated graphene are close, but larger in magnitude as compared to those of hexagonal bN sheet.
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Compositional Tailoring for Realizing High Thermoelectric Performance in Hafnium-Free n-Type ZrNiSn Half-Heusler Alloys.
Nagendra S. Chauhan,Sivaiah Bathula,Sivaiah Bathula,Sivaiah Bathula,Bhasker Gahtori,Bhasker Gahtori,Subhendra D. Mahanti,Amrita Bhattacharya,Avinash Vishwakarma,Avinash Vishwakarma,Ruchi Bhardwaj,Ruchi Bhardwaj,Vidya Nand Singh,Ajay Dhar,Ajay Dhar +14 more
TL;DR: Defect-mediated optimization of electrical and thermal transport via carrier concentration tuning, energy filtering, and possibly all scale-hierarchical architecture, resulted in a maximum ZT ~1.1 at 873K for the optimized ZrNi1.03Sn composition.