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Andreia Luisa da Rosa

Researcher at Universidade Federal de Goiás

Publications -  70
Citations -  1721

Andreia Luisa da Rosa is an academic researcher from Universidade Federal de Goiás. The author has contributed to research in topics: Density functional theory & Nanowire. The author has an hindex of 21, co-authored 69 publications receiving 1597 citations. Previous affiliations of Andreia Luisa da Rosa include Chinese Academy of Sciences & Universidade Federal de Minas Gerais.

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Ferromagnetism in Cu-doped ZnO from first-principles theory

TL;DR: In this article, the electronic structure and the ferromagnetic stability in Cu-doped ZnO were studied using the first-principles method based on the density functional theory.
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Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

TL;DR: In this paper, the electronic band structures of silicon and the zinc-blende-type III-N semiconductor compounds BN, AlN, GaN, and InN are calculated by using the self-consistent full potential linear augmented plane wave method within the local-density functional approximation.
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Resonant Electron Heating and Molecular Phonon Cooling in Single C60 Junctions

TL;DR: Transport simulations explain heating and heat dissipation of a single C(60) molecule in the junction of a scanning tunneling microscope by measuring the electron current required to thermally decompose the fullerene cage.
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Toward an Accurate Density-Functional Tight-Binding Description of Zinc-Containing Compounds.

TL;DR: An extended self-consistent charge density-functional tight-binding (SCC-DFTB) parametrization for Zn-X (X = H, C, N, O, S, and Zn) interactions has been derived and the derived parameters are universal and fully transferable.
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First-principles calculations of the structural and electronic properties of clean GaN (0001) surfaces

TL;DR: In this article, the authors employ density functional theory (DFT) within the local density approximation (LDA) and generalized gradient approximation (GGA) to study structural and electronic properties of clean $\mathrm{GaN}\phantom{\rule{0.3em}{0ex}}(0001)$ surfaces.