Ángel Mediavilla Sánchez

TL;DR: In this article, an empirical modeling approach is presented to accurately predict deviations between static and dynamic drain current characteristics caused by dispersive effects in III-V devices operating at microwave frequencies.

TL;DR: In this paper, a dedicated nonlinear MESFET model was used to accurately represent the device's drain-source current nonlinearity, and an analytical expression was proposed, based on the Shockley approach, with good derivative reproduction.

TL;DR: In this article, the gate-to-source nonlinear capacitor contribution on small-signal intermodulation distortion (IMD) as well as other nonlinear related phenomena such as the onset of phase distortion and gain compression in GaAs FET devices are discussed.

TL;DR: In this paper, a transmission/reflection microwave method based on uncalibrated S -parameter measurements for complex permittivity determination of dielectric materials is presented.

TL;DR: The SPWL model is an extension of the well-known canonical piecewise-linear model proposed by Chua, which substitutes the abrupt absolute value function for a smoothing function (the logarithm of hyperbolic cosine), thus providing the model with several interesting properties.