Kehao Zhang

TL;DR: Lin et al. as mentioned in this paper reviewed the most recent breakthrough discoveries as well as emerging opportunities and remaining challenges in the field of 2D materials, including transition metal dichalcogenides, mono-elemental 2D sheets, and several carbide-and nitride-based materials.

TL;DR: It is shown that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations preclude Mn incorporation and merely lead to defective MoS 2.

TL;DR: Lattice-matched epitaxial growth of molybdenum disulfide (MoS2) directly on gallium nitride (GaN), resulting in high-quality, unstrained, single-layer MoS2 with strict registry to the GaN lattice presents a promising path toward the implementation of high-performance electronic devices based on 2D/3D vertical heterostructures.

TL;DR: This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.