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Anthony Richardella

Researcher at Pennsylvania State University

Publications -  34
Citations -  2604

Anthony Richardella is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Topological insulator & Band gap. The author has an hindex of 16, co-authored 34 publications receiving 2321 citations. Previous affiliations of Anthony Richardella include University of Illinois at Urbana–Champaign & Princeton University.

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Topological surface states protected from backscattering by chiral spin texture

TL;DR: It is demonstrated that the chiral nature of these states protects the spin of the carriers, potentially useful for spin-based electronics, in which long spin coherence is critical, and also for quantum computing applications, where topological protection can enable fault-tolerant information processing.
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p -type Bi 2 Se 3 for topological insulator and low-temperature thermoelectric applications

TL;DR: In this paper, the growth and elementary properties of $p$-type single crystals with $ab$-plane Seebeck coefficients of $+180\text{ }\ensuremath{\mu}\text{V}/ \text{K}$ at room temperature are reported.
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Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

TL;DR: An atom-by-atom substitution technique using a scanning tunnelling microscope is described and applied to perform a controlled study at the atomic scale of the interactions between isolated Mn acceptors, which are mediated by holes in GaAs to reveal a strong dependence of ferromagnetic interaction on crystallographic orientation.
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Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs

TL;DR: Scanning tunneling microscopy reveals the import role of electron-electron interactions in a dilute magnetic semiconductor and shows that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies.
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Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B

TL;DR: In this article, the authors reported the heteroepitaxy of single crystal thin films of Bi2Se3 on the surface of GaAs by molecular beam epitaxy, and they showed that Bi 2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate.