Nitin Samarth

TL;DR: In this article, Ferromagnetic III-V Semiconductors and their Heterostructures and their spin-polarized transport from magnetic into non-magnetic Semiconductor Semiccondors are discussed.

TL;DR: In this article, it was shown that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topologically surface state.

TL;DR: This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces, identifying the most exciting new scientific results and pointing to promising future research directions.

TL;DR: In this article, an artificial geometrically frustrated magnet based on an array of lithographically fabricated single-domain ferromagnetic islands is presented, where the islands are arranged such that the dipole interactions create a two-dimensional analogue to spin ice.

TL;DR: The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, that is, electronics that exploit carrier spin polarization.