Brian B. Zhou

TL;DR: In this article, the authors review recent progress in impurity systems such as colour centres in diamond and silicon carbide, rare-earth ions in solids and donors in silicon and project a possible path to chip-scale quantum technologies through sustained advances in nanofabrication, quantum control and materials engineering.

TL;DR: Scanning tunnelling microscopy measurements at sub-kelvin temperatures and high magnetic fields on the II-V semiconductor Cd3As2.2 show that defects mostly influence the valence band, consistent with the observation of ultrahigh-mobility carriers in the conduction band.

TL;DR: In this article, a superadiabatic transitionless driving (SATD) protocol is proposed to accelerate the stimulated Raman adiabatic passage in a solid-state lambda system.

TL;DR: Scanning tunneling microscopy reveals the import role of electron-electron interactions in a dilute magnetic semiconductor and shows that doping-induced disorder produces strong spatial variations in the local tunneling conductance across a wide range of energies.

TL;DR: Electronic structure calculations performed using the experimentally determined centrosymmetric structure are similar to those performed with the inversion symmetry absent but with the important implication that Cd3As2 is a three-dimensional (3D)-Dirac semimetal with no spin splitting; all bands are spin degenerate and there is a 4-fold degenerate bulk Dirac point at the Fermi energy along Γ-Z in the Brillouin zone.