Optical fiber transmission is impacted by linear and nonlinear impairments. We study the use of digital backpropagation (BP) in conjunction with coherent detection to jointly mitigate dispersion and fiber nonlinearity. We propose a noniterative asymmetric split-step Fourier method (SSFM) for solving the inverse nonlinear Schrodinger equation (NLSE). Using simulation results for RZ-QPSK transmitted over terrestrial systems with inline amplification and dispersion compensation, we obtain heuristics for the step size and sampling rate requirements, as well as the optimal dispersion map.

Compensation of Dispersion and Nonlinear Impairments Using Digital Backpropagation

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical etching in molten salts. The mechanism of each etching process is discussed. Etching parameters leading to highly anisotropic etching, dopant-type/bandgap selective etching, defect-selective etching, as well as isotropic etching are discussed. The etch pit shapes and their origins are discussed. The applications of wet etching techniques to characterize crystal polarity and defect density/distribution are reviewed. Additional applications of wet etching for device fabrication, such as producing crystallographic etch profiles, are also reviewed.

Wet etching of GaN, AlN, and SiC : a review

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

GaN based nanorods for solid state lighting

Optical solitons due to quadratic nonlinearities: from basic physics to futuristic applications

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

http://iopscience.iop.org/article/10.1088/0022-3727/40/20/S19/pdf

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

We experimentally demonstrate the formation of GaN nanotip pyramids by selective and anisotropic etching of N-polar GaN in KOH solution. For samples grown with adjacent Ga- and N-polar regions on the same wafer, the KOH solution was found to selectively etch only the N-polar surface while leaving the Ga-polar surface intact. An aggregation of hexagonal pyramids with well defined {10 1 1} facets and very sharp tips with diameters less than ∼20 nm were formed. The density of the pyramids can be controlled by varying the KOH concentration, solution temperature or the etch duration. The GaN etching activation energy is estimated to be Ea≈0.587 eV. Dense GaN pyramids with sharp tips have applications in both electronic and photonic devices.

GaN nanotip pyramids formed by anisotropic etching

We report the experimental demonstration of second-harmonic generation in periodically poled GaN by first-order quasiphase matching. The periodically poled structure was grown by plasma-assisted molecular-beam epitaxy. We observed about 9 μW of second-harmonic power from a fundamental input laser wavelength of 1658.6 nm with a normalized conversion efficiency of 12.76% W−1 cm−2. The ability to perform nonlinear wavelength conversion by periodic poling and the fact that GaN has a very wide window of transparency, pave the way for GaN to be used for nonlinear optical devices in telecommunications as well as a nonlinear light source for biochemical detection in the far infrared and deep ultraviolet.

Second-harmonic generation in periodically poled GaN

We present results of what is to our knowledge the first experimental demonstration of simultaneous optical wavelength interchange by use of a two-dimensional second-order nonlinear photonic crystal. Fabrication and performance parameters of a 1535-1555-nm wavelength interchange nonlinear photonic crystal fabricated in lithium niobate are discussed.

Experimental demonstration of 1535-1555-nm simultaneous optical wavelength interchange with a nonlinear photonic crystal.

In this paper intrachannel nonlinearities in a return-to-zero differential-phase-shift-keyed (RZ-DPSK) 40-Gb/s 32/spl times/100-km system are compensated in the absence of signal power symmetry using a single LiNbO/sub 3/ conjugator and results in two decades of improvement in bit-error rate (BER). The reduction of transmission impairments enables the reach of the system to be extended from 5200 to 6400 km with a measured BER =5/spl times/10/sup -4/. This paper also presents a first-order perturbation analysis that describes the effects of optical-phase conjugation and dispersion mapping on the optical field of pulses.

Compensation of intra-channel nonlinearities in 40 Gb/s pseudo-linear systems using optical phase conjugation

We describe the use of optical phase conjugation (OPC) to suppress intrachannel nonlinearities that limit pseudolinear transmission. We show that OPC combined with appropriate dispersion mapping is effective in suppressing intrachannel nonlinearities, even in the absence of signal-power evolution symmetry that is generally required by OPC to compensate fiber nonlinearity. An increase in signal power by 5.5 dB is observed when a single OPC is used for 40-Gbit/s pseudolinear transmission over 32 x 100 km of passive-fiber spans.

Aref Chowdhury

Papers

GaN nanotip pyramids formed by anisotropic etching

Second-harmonic generation in periodically poled GaN

Experimental demonstration of 1535-1555-nm simultaneous optical wavelength interchange with a nonlinear photonic crystal.

Compensation of intra-channel nonlinearities in 40 Gb/s pseudo-linear systems using optical phase conjugation

Optical phase conjugation and pseudolinear transmission.