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Arka Bandyopadhyay

Researcher at University of Calcutta

Publications -  20
Citations -  362

Arka Bandyopadhyay is an academic researcher from University of Calcutta. The author has contributed to research in topics: Graphene & Density functional theory. The author has an hindex of 9, co-authored 20 publications receiving 208 citations. Previous affiliations of Arka Bandyopadhyay include Prabhat Kumar College.

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A review on role of tetra-rings in graphene systems and their possible applications.

TL;DR: The role of tetra-rings and the local symmetry breaking on the structural, electronic and optical properties of the graphene system areicate and future directions to be explored to make the synthesis of T-graphene and its various derivatives/allotropes viable for verification of theoretical predictions are suggested.
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Size dependent magnetic and optical properties in diamond shaped graphene quantum dots: A DFT study

TL;DR: In this paper, the magnetic and optical properties of diamond shaped graphene quantum dots (DSGQDs) have been investigated by varying their sizes with the help of density functional theory (DFT).
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The topology and robustness of two Dirac cones in S-graphene: A tight binding approach.

TL;DR: An elegant method to address the emergence of two Dirac cones in a non-hexagonal graphene allotrope S-graphene (SG) using nearest neighbour tight binding model and the supported DFT computation will be very effective in studying the intrinsic behaviour of the Dirac materials other than graphene.
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Acetylenic linkage dependent electronic and optical behaviour of morphologically distinct '-ynes'.

TL;DR: The key role of acetylenic linkages (-C[triple bond, length as m-dash]C-) in determining the opto-electronic responses of dynamically stable tetragonal (T) '-ynes' with the help of a density functional theory method is examined.
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Optical properties and magnetic flux-induced electronic band tuning of a T-graphene sheet and nanoribbon.

TL;DR: In this theoretical investigation, a tight binding model is used to unravel the metal to semiconductor transition of this 2D sheet under the influence of an external magnetic flux and the induced band gaps vary remarkably with the tuning parameters.