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Ashish Bansal

Researcher at International Solar Electric Technology

Publications -  48
Citations -  1815

Ashish Bansal is an academic researcher from International Solar Electric Technology. The author has contributed to research in topics: Medicine & Atopic dermatitis. The author has an hindex of 12, co-authored 18 publications receiving 1694 citations. Previous affiliations of Ashish Bansal include National Renewable Energy Laboratory & California Institute of Technology.

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Alkylation of Si Surfaces Using a Two-Step Halogenation/Grignard Route

TL;DR: In this paper, an alternative strategy to functionalize HF-etched Si surfaces involving halogenation and subsequent reaction with alkyl Grignard or alkyal lithium reagents was proposed.
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Non-vacuum processing of CuIn1−xGaxSe2 solar cells on rigid and flexible substrates using nanoparticle precursor inks

TL;DR: In this paper, a non-vacuum process in which water based inks formulated using nanoparticles of mixed oxides of Cu, In and Ga are used to deposit a precursor layer of fixed Cu/(In+Ga) ratio on a rigid or a flexible substrate of choice using printing techniques.
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High-efficiency integrated multijunction photovoltaic/electrolysis systems for hydrogen production

TL;DR: In this paper, two integrated photovoltaic/electrolysis systems were studied, and a high solar-to-hydrogen conversion efficiency cell demonstrated, where the areas of the PV device and the electrolyzer are identical.
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Spectroscopic Studies of the Modification of Crystalline Si(111) Surfaces with Covalently-Attached Alkyl Chains Using a Chlorination/Alkylation Method

TL;DR: In this article, a two-step procedure involving radical-initiated chlorination of the Si surface with PCl5 followed by reaction of the chlorinated surface with alkyl-Grignard or alkl-lithium reagents, has been developed to functionalize crystalline (111)-oriented H-terminated Si surfaces.
PatentDOI

Stabilization of Si photoanodes in aqueous electrolytes through surface alkylation

TL;DR: In this article, a two-step chlorination/alkylation technique was used to introduce alkyl groups, C n H 2n+1 (n=1-6), functionally onto single-crystal, ( 111 )-oriented, n-type Si surfaces.