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Azam Mayabadi

Researcher at Savitribai Phule Pune University

Publications -  21
Citations -  259

Azam Mayabadi is an academic researcher from Savitribai Phule Pune University. The author has contributed to research in topics: Thin film & Raman spectroscopy. The author has an hindex of 8, co-authored 21 publications receiving 193 citations. Previous affiliations of Azam Mayabadi include Amirkabir University of Technology.

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Evolution of structural and optical properties of rutile TiO2 thin films synthesized at room temperature by chemical bath deposition method

TL;DR: In this paper, the influence of deposition time on structural, morphological and optical properties of nanocrystalline thin films of TiO2 on glass substrates was systematically investigated.
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Effect of calcination temperature on the properties of CZTS absorber layer prepared by RF sputtering for solar cell applications

TL;DR: In this paper, the authors reported synthesis of nanocrystalline Kesterite copper zinc tin sulfide (CZTS) films by RF magnetron sputtering method, which can improve the conversion efficiency by reducing recombination rate of photo-generated charge carriers due to larger grain size.
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Synthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films by hot wire-CVD and investigations of its humidity sensing properties

TL;DR: In this paper, the authors reported synthesis of orthorhombic-molybdenum trioxide (α-MoO3) thin films using home-build hot wire CVD (HW-CVD) method simply by heating the Mo filament in a controlled O2 atmosphere.
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Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

TL;DR: In this paper, structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH4) and methane (CH4) gas mixture by HW-CVD method, were investigated.
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Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

TL;DR: In this article, the influence of boron doping on structural, optical, morphological and electrical properties of 3C-SiC films have been investigated by using HW-CVD using silane (SiH4)/methane (CH4)/diborane (B2H6) gas mixture.