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Dattatray J. Late
Researcher at Amity University
Publications - 224
Citations - 14164
Dattatray J. Late is an academic researcher from Amity University. The author has contributed to research in topics: Field electron emission & Raman spectroscopy. The author has an hindex of 46, co-authored 205 publications receiving 11647 citations. Previous affiliations of Dattatray J. Late include Northwestern University & Bhabha Atomic Research Centre.
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Journal ArticleDOI
MoS2 and WS2 Analogues of Graphene
H. S. S. Ramakrishna Matte,A. Gomathi,Arun K. Manna,Dattatray J. Late,Ranjan Datta,Swapan K. Pati,C. N. R. Rao +6 more
TL;DR: This work aims to prepare graphene-like MoS2 and WS2, which are quasi-two-dimensional compounds in which the atoms within the layer are held together by strong covalent forces while van der Waals interaction enables stacking of the layers.
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Sensing behavior of atomically thin-layered MoS2 transistors
Dattatray J. Late,Yi Kai Huang,B. T. Liu,Jagaran Acharya,Jagaran Acharya,Sharmila N. Shirodkar,Jiajun Luo,Aiming Yan,Daniel Charles,Umesh V. Waghmare,Vinayak P. Dravid,C. N. R. Rao +11 more
TL;DR: The results show that, compared to the single-layer counterpart, transistors of few MoS2 layers exhibit excellent sensitivity, recovery, and ability to be manipulated by gate bias and green light, and ab initio DFT calculations show that the charge transfer is the reason for the decrease in resistance in the presence of applied field.
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Hysteresis in single-layer MoS2 field effect transistors.
TL;DR: Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.
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GaS and GaSe ultrathin layer transistors.
Dattatray J. Late,B. T. Liu,Jiajun Luo,Aiming Yan,H. S. S. Ramakrishna Matte,Matthew Grayson,C. N. R. Rao,Vinayak P. Dravid +7 more
TL;DR: Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported.
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Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates
TL;DR: In this article, the preparation, isolation and rapid unambiguous characterization of large size ultrathin layers of MoS2, GaS, and GaSe deposited onto SiO2/Si substrates is reported.