B
B.M. Welch
Researcher at Electronics Research Center
Publications - 6
Citations - 96
B.M. Welch is an academic researcher from Electronics Research Center. The author has contributed to research in topics: Electronic circuit & Logic gate. The author has an hindex of 3, co-authored 6 publications receiving 96 citations.
Papers
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Journal ArticleDOI
LSI processing technology for planar GaAs integrated circuits
TL;DR: In this article, a planar GaAs integrated circuit (IC) fabrication technology capable of LSI complexity has been developed, which utilizes Schottky-diode FET logic (SDFL) incorporating both high-speed switching diodes and 1-µ m GaAs MESFET's.
Journal ArticleDOI
MP-A3 GaAs digital IC technology/Statistical analysis of device performance
TL;DR: In this article, a new approach to the design and fabrication of GaAs digital integrated circuits capable of high speed and low power dissipation has been demonstrated, which relies on Schottky-diode FET logic (SDFL) circuits which take advantage of the high switching speed and high transconductance of the GaAs 1-µm gate MESFET.
Proceedings ArticleDOI
Planar high yield GaAs IC processing techniques
TL;DR: In this article, a planar GaAs IC process is described, which combines unique planar device structures with a number of LSI compatible high yield processes including ion implantation, photolithography, plasma etching, and ion milling.
Journal ArticleDOI
High-speed GaAs SDFL divider circuit
TL;DR: In this article, a high-speed multimode divider circuit has been designed, fabricated, and tested at a maximum clock frequency of 1.84 GHz using Schottky diode FET logic (SDFL).
Book ChapterDOI
Semi-Insulating GaAs — a User’s View
TL;DR: In this article, the extraordinary progress which has taken place in GaAs digital IC technology over the last two years is reviewed, highlighting the role of the semi-insulating substrate in the context of current circuit fabrication techniques.