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B. W. Chui

Researcher at Stanford University

Publications -  13
Citations -  850

B. W. Chui is an academic researcher from Stanford University. The author has contributed to research in topics: Cantilever & Piezoresistive effect. The author has an hindex of 8, co-authored 13 publications receiving 840 citations.

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Ultrahigh-density atomic force microscopy data storage with erase capability

TL;DR: In this article, a simple atomic force microscopy-based concept for a hard disk-like data storage technology was reported, achieving bit sizes of 10-50 nm and data densities of 500 Gbit/in.
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Low-stiffness silicon cantilevers with integrated heaters and piezoresistive sensors for high-density AFM thermomechanical data storage

TL;DR: In this paper, single-crystal silicon cantilevers with integrated piezoresistive sensors were fabricated with measured sensitivities /spl Delta/R/R up to 7.5/spl times/10/sup -7/ per /spl Aring/ in close agreement with theoretical predictions.
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Low‐stiffness silicon cantilevers for thermal writing and piezoresistive readback with the atomic force microscope

TL;DR: In this paper, a low-stiffness silicon cantilevers have been developed for proposed data storage devices based on the atomic force microscope, in particular thermomechanical recording, which combine a sharp tip with an integrated piezoresistive sensor for data readback from a rotating polycarbonate disk.
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Independent detection of vertical and lateral forces with a sidewall-implanted dual-axis piezoresistive cantilever

TL;DR: A dual-axis atomic force microscope (AFM) cantilever with independent piezoresistive sensors has been developed for simultaneous detection of vertical and lateral forces as discussed by the authors, which consists of a flat, triangular probe connected to a base by four tall, narrow ribs.
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Intrinsic-carrier thermal runaway in silicon microcantilevers

TL;DR: In this paper, a simple model for the thermal runaway effect in doped silicon cantilevers was developed, which relates the electrical conductivity in the cantilever to the temperature-dependent carrier concentrations in silicon and is consistent with the available experimental data.