B
Bang Li
Researcher at Beijing University of Posts and Telecommunications
Publications - 23
Citations - 227
Bang Li is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Nanowire & Graphene. The author has an hindex of 7, co-authored 23 publications receiving 146 citations.
Papers
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Journal ArticleDOI
A graphene/single GaAs nanowire Schottky junction photovoltaic device
Yanbin Luo,Xin Yan,Jinnan Zhang,Bang Li,Yao Wu,Qichao Lu,Chenxiaoshuai Jin,Xia Zhang,Xiaomin Ren +8 more
TL;DR: The graphene/single GaAs nanowire Schottky junction photovoltaic device demonstrated here is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.
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A single crystalline InP nanowire photodetector
TL;DR: In this paper, a metal-semiconductor-metal photodetector based on a single crystalline InP iannowire is reported, which exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases.
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Mimicking synaptic functionality with an InAs nanowire phototransistor
Bang Li,Wei Wei,Wei Wei,Xin Yan,Xia Zhang,Peng Liu,Yanbin Luo,Jiahui Zheng,Qichao Lu,Qimin Lin,Xiaomin Ren +10 more
TL;DR: A nanowire (NW) phototransistor with synaptic behavior based on inherent persistent photoconductivity with promising applications in neuromorphic systems and networks is demonstrated.
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High-speed ultra-compact all-optical NOT and AND logic gates designed by a multi-objective particle swarm optimized method
Qichao Lu,Xin Yan,Wei Wei,Xia Zhang,Mingqian Zhang,Jiahui Zheng,Bang Li,Yanbin Luo,Qimin Lin,Xiaomin Ren +9 more
TL;DR: The design method could have tolerance for small changes in device geometry, which means that the logic gates could remain functional while the pixel side length ranges from 112 to 125 nm, which makes these devices promising for future photonic-integrated circuits.
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Self-catalyzed Growth of InAs Nanowires on InP Substrate
TL;DR: This work provides a method for the fabrication of defect-free InAs nanowires by metal-organic chemical vapor deposition and exhibits kinking, which is associated with a high adhesion due to a large sticking coefficient of TMIn.