B
Barry Miller
Researcher at Alcatel-Lucent
Publications - 404
Citations - 12385
Barry Miller is an academic researcher from Alcatel-Lucent. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 60, co-authored 404 publications receiving 12262 citations. Previous affiliations of Barry Miller include AT&T & Bell Labs.
Papers
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Journal ArticleDOI
InGaAsP monolithic extended‐cavity lasers with integrated saturable absorbers for active, passive, and hybrid mode locking at 8.6 GHz
P. B. Hansen,G. Raybon,Uziel Koren,Patrick P. Iannone,Barry Miller,G. Young,Michael A. Newkirk,C. A. Burrus +7 more
TL;DR: In this paper, active, passive, and hybrid mode locking of a monolithic extended-cavity semiconductor laser with an integrated saturable absorber have been demonstrated, achieving a repetition rate of 8.6 GHz, 6.2 ps, and 4.4 ps, respectively.
Journal ArticleDOI
Balanced operation of a GaInAs/GaInAsP multiple-quantum-well integrated heterodyne receiver
Thomas L. Koch,Fow-Sen Choa,Uziel Koren,R. P. Gnall,F. Hernandez-Gil,C. A. Burrus,M. G. Young,M. Oron,Barry Miller +8 more
TL;DR: In this paper, the balanced operation of a multiple-quantum-well balanced heterodyne receiver photonic integrated circuit (PIC) was described using only SMA-connected 50 Omega commercial electronics, achieving a free-space beam sensitivity of -42.3 dBm at 108 Mb/s and -39.7 dBm for NRZ FSK (frequency-shift keying) reception.
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High-speed, polyimide-based semi-insulating planar buried heterostructures
TL;DR: In this paper, the authors describe planar buried heterostructure lasers which have low capacitance (lpF), large bandwidth (19GHz), high power (>20mW/facet) and high temperature operation (100°C).
Journal ArticleDOI
High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator
Uziel Koren,Barry Miller,Rodney S. Tucker,Gadi Eisenstein,I. Bar-Joseph,David A. B. Miller,Daniel S. Chemla +6 more
TL;DR: In this paper, the structure and performance characteristics of an InGaAs/InP multiple-quantum-well (MQW) electroabsorption buried-mesa optical modulator are described.
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Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE
Abstract: GaInAs/InP planar buried heterostructure (PBH) lasers with semi-insulating blocking layers were grown in an `all? atmospheric OMVPE system. These layers had current thresholds as low as 35 mA and differential quantum efficiencies of ?16% at a wavelength of 1.64 ?m. The maximum power output was 80 mW pulsed and 8mWCW.