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Bin Peng

Researcher at Xi'an Jiaotong University

Publications -  140
Citations -  2266

Bin Peng is an academic researcher from Xi'an Jiaotong University. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 21, co-authored 125 publications receiving 1561 citations. Previous affiliations of Bin Peng include Tsinghua University & University of Electronic Science and Technology of China.

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Recent development and status of magnetoelectric materials and devices

TL;DR: The magnetoelectric (ME) materials and related devices have been attracting increasing research attention over the last few years as discussed by the authors and they exhibit strong ME coupling effect at room temperature, and electric field control of magnetization or magnetic field controlled of ferroelectric polarization can be achieved.
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Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3–PbTiO3 Multiferroic Heterostructures

TL;DR: Electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)3/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT) enables the realization of power efficient PMA magnetoelectric and spintronic devices.
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Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism.

TL;DR: This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid -gating spintronic/electronic devices.
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Large enhancement of the recoverable energy storage density and piezoelectric response in relaxor-ferroelectric capacitors by utilizing the seeding layers engineering

TL;DR: In this article, the authors demonstrate an approach to improve the recoverable energy-storage performance and piezoelectric response of 0.4Bi(Ni 1/2Zr1/2)O3-0.6PbTiO3 (BNZ-PT) relaxor-ferroelectric film capacitors by utilizing the seeding layers engineering.