日本物理学会誌及びJournal of the Physical Society of Japanの月刊について

The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials

Graphene Spintronics

We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energies. We take into account five tight-binding parameters of the Slonczewski–Weiss–McClure model of bulk graphite plus intra- and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects.

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The electronic properties of bilayer graphene.

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

https://link.aps.org/accepted/10.1103/RevModPhys.89.025006

Interface-induced phenomena in magnetism

A review of new developments in theoretical and experimental electronic-structure investigations of half-metallic ferromagnets (HMFs) is presented. Being semiconductors for one spin projection and metals for another, these substances are promising magnetic materials for applications in spintronics (i.e., spin-dependent electronics). Classification of HMFs by the peculiarities of their electronic structure and chemical bonding is discussed. The effects of electron-magnon interaction in HMFs and their manifestations in magnetic, spectral, thermodynamic, and transport properties are considered. Special attention is paid to the appearance of nonquasiparticle states in the energy gap, which provide an instructive example of essentially many-body features in the electronic structure. State-of-the-art electronic calculations for correlated d-systems are discussed, and results for specific HMFs (Heusler alloys, zinc-blende structure compounds, CrO2, and Fe3O4) are reviewed.

/pdf/half-metallic-ferromagnets-from-band-structure-to-many-body-1hrl8mp5lm.pdf

Half-metallic ferromagnets: From band structure to many-body effects

The halide perovskites have truly emerged as efficient optoelectronic materials and show the promise of exhibiting nontrivial topological phases. Since the bandgap is the deterministic factor for these quantum phases, here we present a comprehensive electronic structure study using first-principle methods by considering nine inorganic halide perovskites CsBX$_3$ (B = Ge, Sn, Pb; X = Cl, Br, I) in their three structural polymorphs (cubic, tetragonal and orthorhombic). A series of exchange-correlations (XC) functionals are examined towards accurate estimation of the bandgap. Furthermore, while thirteen orbitals are active in constructing the valence and conduction band spectrum, here we establish that a four orbital based minimal basis set is sufficient to build the Slater-Koster tight-binding model (SK-TB), which is capable of reproducing the bulk and surface electronic structure in the vicinity of the Fermi level. Therefore, like the Wannier based TB model, the presented SK-TB model can also be considered as an efficient tool to examine the bulk and surface electronic structure of halide family of compounds. As estimated by comparing the model study and DFT band structure, the dominant electron coupling strengths are found to be nearly independent of XC functionals, which further establishes the utility of the SK-TB model.

A Generic Slater-Koster Description of the Electronic Structure of Centrosymmetric Halide Perovskites

We report thickness dependent metal insulator transition in Ga doped ZnO (Ga:ZnO) thin films grown by pulsed laser deposition technique. From the electrical transport measurements, we find that while the thinnest film exhibits a resistivity of 0.05 $\Omega$-cm, lying in the insulating regime, the thickest has resistivity of $6.6\times10^{-4}\Omega$-cm which shows metallic type of conduction. Our analysis reveals that the Mott's variable range hopping (VRH) model governs the insulating behavior in the thinner Ga:ZnO whereas the 2D weak localization phenomena is appropriate to explain the electron transport in the thicker Ga:ZnO. Magnetoresistance study further confirms the presence of strong localization in 6 nm film while weak localization is observed in 20 nm and above thicker films. From the density functional calculations, it is found that due to surface reconstruction and Ga doping, strong crystalline disorder sets in very thin films to introduce localized states and thereby, restricts the donor electron mobility.

Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness

Optical trapping allows the trapping and manipulation of dielectric microparticles. However, full control over all six degrees of freedom of the trapped object is challenging. Here, we use ferromagnetic iron-doped upconversion microparticles for simultaneous optical trapping and magnetic micromanipulation that allows full control over all translational and rotational degrees of freedom. These microparticles have a low absorption that allows optical trapping and a high coercivity and saturation magnetization that allow magnetic manipulation. The particles will enable micromanipulation experiments, for example, in single-molecule biophysics. 

Simultaneous Optical Trapping and Electromagnetic Micromanipulation of Ferromagnetically Doped NaYF4 Microparticles

Density functional calculations are carried out to understand and tailor the electrochemical profile diffusivity, band gap and open circuit voltage of transition metal doped olivine phosphate $LiFe_{1-x}M_{x}PO_{4}$ (M = V, Cr, Mn, Co and Ni). Diffusion and hence the ionic conductivity is studied by calculating the activation barrier, $V_{act}$, experienced by the diffusing $Li^{+}$ ion. We show that the effect of dopants on diffusion is both site dependent and short ranged and thereby it paves ways for microscopic control of ionic conductivity via selective dopants in this olivine phosphates. Dopants with lower valence electrons (LVE) compared to Fe repel the $Li^{+}$ ion to facilitate its outward diffusion, whereas higher valence electron (HVE) dopants attracts the $Li^{+}$ ion to facilitate the inward diffusion. From the electronic structure calculation we establish that irrespective of the dopant M, except Mn, the band gap is reduced since the M-$d$ states always lie within the pure band gap. Atomically localized $d$ states of HVE dopants lie above the Fermi energy and that of LVE lie below it. Half-filled Mn-$d$ states undergo large spin-exchange split to bury the dopant states in valence and conduction bands of the pristine system and in turn the band gap remains unchanged in $LiFe_{1-x}Mn_{x}PO_{4}$. Baring Mn, the open circuit voltage increases with HVE dopants and decreases with LVE dopants.

Engineering Diffusivity and Operating Voltage in Lithium Iron Phosphate through Transition Metal Doping

The halide perovskites have truly emerged as efficient optoelectronic materials and show the promise of exhibiting nontrivial topological phases. Since the bandgap is the deterministic factor for these quantum phases, here, we present a comprehensive electronic structure study using first-principle methods by considering nine inorganic halide perovskites CsBX3 (B = Ge, Sn, Pb; X = Cl, Br, I) in their three structural polymorphs (cubic, tetragonal, and orthorhombic). A series of exchange–correlation (XC) functionals are examined toward accurate estimation of the bandgap. Furthermore, while 13 orbitals are active in constructing the valence and conduction band spectra, here, we establish that a 4 orbital based minimal basis set is sufficient to build the Slater–Koster tight-binding (SK-TB) model, which is capable of reproducing the bulk and surface electronic structures in the vicinity of the Fermi level. Therefore, like the Wannier based TB model, the presented SK-TB model can also be considered an efficient tool to examine the bulk and surface electronic structures of the halide family of compounds. As estimated by comparing the model study and DFT band structure, the dominant electron coupling strengths are found to be nearly independent of XC functionals, which further establishes the utility of the SK-TB model.

Birabar Nanda

Papers

A Generic Slater-Koster Description of the Electronic Structure of Centrosymmetric Halide Perovskites

Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness

Simultaneous Optical Trapping and Electromagnetic Micromanipulation of Ferromagnetically Doped NaYF4 Microparticles

Engineering Diffusivity and Operating Voltage in Lithium Iron Phosphate through Transition Metal Doping

A generic Slater–Koster description of the electronic structure of centrosymmetric halide perovskites