Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Methods and systems for utilizing design data in combination with inspection data

Various methods and systems for determining a position of inspection data in design data space are provided. One computer-implemented method includes determining a centroid of an alignment target formed on a wafer using an image of the alignment target acquired by imaging the wafer. The method also includes aligning the centroid to a centroid of a geometrical shape describing the alignment target. In addition, the method includes assigning a design data space position of the centroid of the alignment target as a position of the centroid of the geometrical shape in the design data space. The method further includes determining a position of inspection data acquired for the wafer in the design data space based on the design data space position of the centroid of the alignment target.

Methods and systems for determining a position of inspection data in design data space

Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of the reticle design pattern using a sensor disposed on a substrate arranged proximate to an image plane of an exposure system configured to perform a wafer printing process using the reticle design pattern. The images illustrate how the reticle design pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in the reticle design pattern based on a comparison of two or more of the images corresponding to two or more of the different values.

Methods and systems for detecting defects in a reticle design pattern

Various computer-implemented methods are provided. One method for evaluating reticle layout data includes generating a simulated image using the reticle layout data as input to a model of a reticle manufacturing process. The simulated image illustrates how features of the reticle layout data will be formed on a reticle by the reticle manufacturing process. The method also includes determining manufacturability of the reticle layout data using the simulated image. The manufacturability is a measure of how accurately the features will be formed on the reticle. Also provided are various carrier media that include program instructions executable on a computer system for performing a method for evaluating reticle layout data as described herein. In addition, systems configured to evaluate reticle layout data are provided. The systems include a computer system and a carrier medium that includes program instructions executable on the computer system for performing method(s) described herein.

Methods, systems, and carrier media for evaluating reticle layout data

Systems and methods for creating inspection recipes are provided. One computer-implemented method for creating an inspection recipe includes acquiring a first design and one or more characteristics of output of an inspection system for a wafer on which the first design is printed using a manufacturing process. The method also includes creating an inspection recipe for a second design using the first design and the one or more characteristics of the output acquired for the wafer on which the first design is printed. The first and second designs are different. The inspection recipe will be used for inspecting wafers after the second design is printed on the wafers using the manufacturing process.

Systems and methods for creating inspection recipes

Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k/sub 1/ processes industry wide. Especially at 193 nm scanner exposure, the mask pattern surface, pellicle film and the enclosed space between the pellicle and pattern surface can create a highly reactive environment. This environment can become susceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of high energy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300 mm wafer fab receives roughly double the number of exposures without any cool down period, as compared to the reticles in a 200 mm wafer fab. Therefore, 193 nm lithography processes at a 300 mm wafer fab put lithographers and defect engineers into an area of untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) was periodically exposed on a 193 nm scanner and the relationship between the number of exposures (i.e., energy passed through the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defects was performed in order to understand the mechanism of this "growth".

Investigation of reticle defect formation at DUV lithography

Sub-pellicle particle formation continues to be a significant problem in semiconductor fabs. We have previously reported on the identification of various defects detected on reticles after extended use. This paper provides a comprehensive evaluation of various molecular contaminants found on the backside surface of a reticle used in high-volume production. Previously all or most of the photo-induced contaminants were detected under the pellicle. This particular contamination is a white "haze" detected by pre-exposure inspection using KLA-Tencor TeraStar STAR light with Un-patterned Reticle Surface Analysis, (URSA). Chemical analysis was done using Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) and Raman spectroscopy.

Reticle surface contaminants and their relationship to sub-pellicle defect formation

Defect formation on advanced photomasks used for DUV lithography has introduced new challenges at low k 1 processesindustry wide. Especially at 193-nm scanner exposure, the mask pattern surface, pellicle film and the enclosed spacebetween the pellicle and pattern surface can create a highly reactive environment. This environment can becomesusceptible to defect growth during repetitive exposure of a mask on DUV lithography systems due to the flow of highenergy through the mask. Due to increased number of fields on the wafer, a reticle used at a 300-mm wafer fab receivesroughly double the number of exposures without any cool down period, as compared to the reticles in a 200-mm waferfab. Therefore, 193-nm lithography processes at a 300-mm wafer fab put lithographers and defect engineers into an areaof untested mask behavior. During the scope of this investigation, an attenuated phase shift mask (attPSM) wasperiodically exposed on a 193-nm scanner and the relationship between the number of exposures (i.e., energy passedthrough the mask during exposures) versus defect growth was developed. Finally, chemical analysis of these defectswas performed in order to understand the mechanism of this growth.Keywords : DUV, PSM, mask contamination, mask, crystal-growth, Cyanuric acid, pellicle, 193nm, scanner, STARlight

As DUV lithography becomes more ubiquitous in the manufacture of semiconductors, the importance of detecting mask anomalies that can be attributed to the exposure of mask materials to 248nm exposure becomes necessary. The requirement to find and eliminate the sources of these types of defects becomes even more important with low k 1 lithography. The authors wish to report a new class of defects that can significantly impact mask performance and semiconductor chip manufacturing yields. This paper will discuss the techniques and defect detection systems used to identify the presence of these sub-pellicle (or pellicle-related) defects. Additionally, the mechanism of defect formation and micro-analytical results identifying both the composition and possible sources of the defects will be presented.

Formation and detection of subpellicle defects by exposure to DUV system illumination

Photolithography masks, systems and methods and more particularly to photolithography masks systems and methods for making and using silicon dioxide mask substrates are disclosed. The mask generally includes a silicon-dioxide mask substrate having a front surface, a patterned layer disposed on the front surface, and a coating of a fluoride of an element of group IIA that covers the patterned layer. The coating reduces undesired crystal growth on the silicon dioxide mask substrate. Such masks can be incorporated into photolithography systems and used in photolithography methods wherein a layer of photoresist is formed on a substrate and to radiation that impinges on the mask. Such a mask can be fabricated, e.g., by forming a patterned layer on a front surface of a silicon dioxide mask substrate and covering the patterned layer with a coating of a fluoride of an element of group IIA.

Brian J. Grenon

Papers

Investigation of reticle defect formation at DUV lithography

Reticle surface contaminants and their relationship to sub-pellicle defect formation

Investigation of reticle defect formation at DUV lithography

Formation and detection of subpellicle defects by exposure to DUV system illumination

Films for prevention of crystal growth on fused silica substrates for semiconductor lithography