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Brice Gautier
Researcher at Institut des Nanotechnologies de Lyon
Publications - 106
Citations - 1232
Brice Gautier is an academic researcher from Institut des Nanotechnologies de Lyon. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 18, co-authored 102 publications receiving 1095 citations. Previous affiliations of Brice Gautier include University of Lyon & École centrale de Lyon.
Papers
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Journal ArticleDOI
Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application
Gang Niu,S. Yin,Guillaume Saint-Girons,Brice Gautier,Philippe Lecoeur,V. Pillard,G. Hollinger,Bertrand Vilquin +7 more
TL;DR: In this paper, the epitaxial growth of BaTiO"3 films on Si(001) substrate buffered by 5nm-thick SrTiO'3 layer using both MBE and PLD techniques was reported.
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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
Gang Niu,Gang Niu,Pauline Calka,Matthias Auf der Maur,Francesco Santoni,Subhajit Guha,Mirko Fraschke,Philippe Hamoumou,Brice Gautier,Eduardo Perez,Christian Walczyk,Christian Wenger,Aldo Di Carlo,Lambert Alff,Thomas Schroeder,Thomas Schroeder +15 more
TL;DR: Highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method and a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach.
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Chemistry and Atomic Distortion at the Surface of an Epitaxial BaTiO3 Thin Film after Dissociative Adsorption of Water
Jiale Wang,François Gaillard,A. Pancotti,Brice Gautier,Gang Niu,Bertrand Vilquin,V. Pillard,G. L. M. P. Rodrigues,Nicholas Barrett +8 more
TL;DR: In this article, the atomic and chemical structure of the surface of a fully strained, TiO2-terminated, ferroelectric BaTiO3 (BTO) (001) epitaxial film was studied after controlled exposure to water.
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Electrochemical behaviour of ceramic sol gel coatings on mild steel
TL;DR: In this paper, the anticorrosion behavior of spin-coated sol-gel titania, silica and mixed thin films undoped and doped with cobalt, iron and tin ions was investigated.
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Deconvolution of SIMS Depth Profiles of Boron in Silicon
TL;DR: In this paper, the authors measured the depth resolution function of the SIMS analysis of boron in silicon for different experimental conditions and fitted this function with an analytical expression initially proposed by Dowsettet et al.