Showing papers in "Microelectronic Engineering in 2011"

TL;DR: In this paper, a cyclic uniaxial tension test with a fixed magnitude of applied strain and a single-pull-to-failure tension test were performed with a micro-tensile tester at room temperature.

TL;DR: In this paper, a limited number of alloying systems are available for lead-free solders in the high-temperature regime, but none of them can fulfill all the requirements to replace the current high-lead content solders.

TL;DR: In this article, the authors reported the realization of low resistance silver lines by inkjet printing of a commercial silver-based ink on a flexible kapton substrate and subsequent low energy laser annealing to promote nanoparticle coalescence.

TL;DR: In this article, the compatibility of GeSn materials with source/drain engineering processes (B implantation and activation and NiGeSn formation) has been studied, and a low thermal budget has been determined for those processes on GeSn alloys.

TL;DR: In this paper, a silicon MEMS-based capacitive sensing array is presented, which has the ability to resolve forces in the sub mN range, provides directional response to applied loading and has the capability to differentiate between surface textures.

TL;DR: In this paper, the main technological challenges associated with monolithic 3D integration are reviewed and solutions to assess them are proposed, and the electrical results obtained within this integration scheme are summarized: mixed Ge over Si invertor is demonstrated and electrostatic coupling between top and bottom layer is used to shift the threshold voltage of the top layer.

TL;DR: In this article, the fabrication process of ceramic microneedle arrays (MNAs) is presented, which includes the manufacturing of an SU-8/Si-master, its double replication resulting in a PDMS mold for production by micromolding and ceramic sintering.

TL;DR: In this paper, the epitaxial growth of BaTiO"3 films on Si(001) substrate buffered by 5nm-thick SrTiO'3 layer using both MBE and PLD techniques was reported.

TL;DR: In this paper, the authors combine conductive atomic force microscopy (CAFM) and first principles calculations to investigate leakage current in thin polycrystalline HfO"2 films.

TL;DR: In this article, the authors investigated the role of the dimensions of micro-thermoelectric generators, including the length of the thermoelements, thickness of the substrates, and cross-sectional area.

TL;DR: In this article, the authors investigate the properties of oxygen-related defects and hydrogen impurities in monoclinic HfO"2 and ZrO'2 using first-principles calculations based on a hybrid functional and examine how the formation energy of these defects depend on the Fermi level and chemical potential.

TL;DR: In this article, the surface modification of polydimethylsiloxane (PDMS) by atmospheric pressure plasma (APP) was studied and the modified hydrophilic surface of PDMS lasted for 20 days.

TL;DR: In this paper, the authors show evidence of reproducible electrical switching, without the need of an annealing post-treatment, and the kinetic behavior of the switching mechanism was studied using electrical experiments.

TL;DR: In this paper, the dielectric constants of Al"2O"3, HfO"2, and composite Al 2O 3/Al 2O 4/HfO 3 films were calculated from the C-V measurement, and the results showed that the composite structure provided sharp oxide/GaN interface without interfacial layer.

TL;DR: In this article, the authors report on Cu plating of through-silicon-vias (TSV) using in-house made acidic Cu bath with model additives (SPS, PEG, and JGB).

TL;DR: In this article, the authors address the modeling of reset and retention processes in unipolar resistive-switching memory devices and provide a 3D numerical solver for the design and exploration of scaling and performance of RRAM cells.

TL;DR: In this paper, the integration of vertical carbon nanotubes (CNTs) in sub-micron contact holes is evaluated at wafer scale and the major integration challenges encountered in the practical realization of the process are discussed.

TL;DR: In this paper, the authors examined the correlation of the interfacial chemistry of atomic layer deposited, high-k/III-V interfaces with device behavior in view of first principles modelling and found that the oxidation of the interface results in the formation of persistent deleterious defects such as As dimers.

TL;DR: In this paper, the authors highlight key integration issues that were encountered during the development of the 3D-stacked IC Through Silicon Via (TSV) module and present solutions to achieve a robust copper TSV.

TL;DR: In this article, a chipless inductively coupled RF resonant tag is analyzed as a test structure and a floating bridge layout is employed to provide high yield when fabricated by roll-to-roll (R2R) printing.

TL;DR: In this paper, the fabrication and characterization of stress-driven aluminum nitride (AlN) cantilevers to be applied as flow sensor for fish lateral line system is reported.

TL;DR: In this paper, a mass production amenable technology for the fabrication of polymer fibers that can be used as 3D scaffolds for cell culture and tissue engineering is demonstrated, showing application potentials for large volume cell proliferation.

TL;DR: In this article, the effects of gate insulators for oxide TFTs have been investigated by two types of a-IGZO TFT with high-k and low-k oxides.

TL;DR: In this paper, the use of a helium ion microscope with an integrated gas injection system for nanofabrication is explored by demonstrating the milling of fine features into single layered graphene and the controlled deposition of tungsten and platinum wires from gaseous precursors.

TL;DR: In this paper, the effect of mechanical process parameters such as down force and rotation speed on friction behavior and material removal rate (MRR) was investigated during chemical mechanical polishing (CMP) of sapphire substrate.

TL;DR: In this paper, a 1T1R RRAM architecture with an access transistor was proposed for the precise and reliable control of the forming/set current by using an access transistors.

TL;DR: In this article, a tip-enhanced Raman imaging of single layer and multilayer graphene flakes has been performed by flattening Au microwires for tapping mode atomic force microscopy (AFM) and tip enhanced Raman spectroscopy.

TL;DR: In this paper, an improved EOT-leakage current scaling is observed with the use of chemical oxides as compared to thermally grown SiO"2 as interface layer for the HfO2.

TL;DR: In this article, the authors used guided-mode resonant gratings to generate interference patterns of the evanescent electromagnetic waves with significantly subwavelength period using significantly sub-wavelength periods.

TL;DR: In this article, two types of Non-Volatile Memories (NVM): the Phase Change Memories (PCM) and the Current Bridging Random Access Memories (CBRAM) are reviewed.