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Bruce E. Gnade
Researcher at University of Texas at Dallas
Publications - 307
Citations - 10793
Bruce E. Gnade is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 46, co-authored 302 publications receiving 10382 citations. Previous affiliations of Bruce E. Gnade include University of Texas System & University of Maryland, College Park.
Papers
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Proceedings ArticleDOI
Low temperature deposition of hafnium silicate gate dielectrics for TFTs on plastic substrates
TL;DR: In this article, the formation and characterization of hafnium silicate by UV/O/sub 3/ oxidation was described as a potential gate dielectric candidate for high performance thinfilm transistors on plastic substrates.
Self-healing of metal oxide composite materials
TL;DR: In this article, the porous polylactic acid (PLA) spheres and fibers were exposed to titanium (IV) chloride to introduce the metal oxide precursor into the pores and subsequently sealed by annealing and solvent treatment.
Journal ArticleDOI
Correlation between energy loss and ion-induced electron emission of 1 MeV protons channeled along the 〈100〉 axis of a thin silicon crystal
Z.Y. Zhao,A.M. Arrale,S. L. Li,Floyd D. McDaniel,S. Matteson,Duncan L. Weathers,J.M. Anthony,Bruce E. Gnade +7 more
TL;DR: In this paper, the angular dependence of the energy loss and the corresponding IIEE yields of channeled protons near the 〈100〉 direction in a thin silicon crystal were investigated.
Patent
Vicinity sensor systems and related methods
TL;DR: In this article, the authors describe Embodiments of vicinity sensor systems and related methods, and present a set of methods and technologies for their use. But they do not discuss their applications.
Patent
Method for the integration of monlithic thin film radiation detector systems
Jesus I. Mejia-Silva,Manuel Quevedo-Lopez,Bruce E. Gnade,Avila Avendano Carlos Hugo,Bhabendra K. Pradhan +4 more
TL;DR: A thin film radiation detection device includes a photosensitive p-n diode (102), a polysilicon thin film transistor (TFT), a radiation detection layer (106), and a substrate (108) as mentioned in this paper.