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Bruce E. Gnade
Researcher at University of Texas at Dallas
Publications - 307
Citations - 10793
Bruce E. Gnade is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 46, co-authored 302 publications receiving 10382 citations. Previous affiliations of Bruce E. Gnade include University of Texas System & University of Maryland, College Park.
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Patent
Porous dielectric on semiconductor device and methods for fabrication thereof
TL;DR: In this article, the porosity of the sublayers may be tailored individually by varying the composition of solutions, gelling conditions, drying temperature, composition of the solvents in the wet gel, or a combination of these approaches.
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Synthesis and characterization of polythiophenes with alkenyl substituents
Nadia Hundt,Kumaranand Palaniappan,Prakash Sista,John W. Murphy,Jing Hao,Hien Q. Nguyen,Eugene Stein,Michael C. Biewer,Bruce E. Gnade,Mihaela C. Stefan +9 more
TL;DR: In this article, the first synthesis of polythiophenes with alkenyl side chains was reported for the first time and the field effect mobilities and photovoltaic response in bulk heterojunction solar cells were measured.
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Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon
R.P. Pezzi,L. Miotti,Karen Paz Bastos,Gabriel Vieira Soares,Carlos Driemeier,Israel Jacob Rabin Baumvol,Prakaipetch Punchaipetch,G. Pant,Bruce E. Gnade,Robert M. Wallace,Antonio L. P. Rotondaro,J.M. Visokay,James J. Chambers,Luigi Colombo +13 more
TL;DR: In this article, hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in H1-and H2-containing atmospheres was investigated.
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Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Transistors
Israel Mejia,A. L. Salas-Villasenor,Dongkyu Cha,Husam N. Alshareef,Bruce E. Gnade,Manuel Quevedo-Lopez +5 more
TL;DR: In this article, the authors report photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques.
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Fatigue characteristics of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for flexible electronics memory applications
TL;DR: In this paper, the electrical fatigue characteristics of 100 nm thick copolymer thin film metal-Ferroelectric-Metal (MFM) capacitors have been studied and after one million stress cycles at an electric field of 1.4 MV/cm and 500 Hz switching frequency, 87% of the initial switching polarization is maintained, with the non-switching polarization remaining low.