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Bruce E. Gnade
Researcher at University of Texas at Dallas
Publications - 307
Citations - 10793
Bruce E. Gnade is an academic researcher from University of Texas at Dallas. The author has contributed to research in topics: Thin film & Dielectric. The author has an hindex of 46, co-authored 302 publications receiving 10382 citations. Previous affiliations of Bruce E. Gnade include University of Texas System & University of Maryland, College Park.
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Patent
Anode comprising an opaque electrically insulating material, for use in a field emission device
TL;DR: In this paper, two methods of fabricating anode plate 50 are disclosed, one of which is formed by mixing a TEOS solution with a dye or a source of metallic ions, spinning or spreading the mixture on glass substrate, and curing the mixture to drive out the organics and solvents.
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Synthesis and characterization of poly(2,5-didecyl-1,4-phenylene vinylene), poly(2,5-didecyloxy-1,4-phenylene vinylene), and their alternating copolymer
Crystal A. Young,Sairoong Saowsupa,Audrey Hammack,Andrew A. Tangonan,Piched Anuragudom,Huiping Jia,Andrew C. Jamison,Sukon Panichphant,Bruce E. Gnade,T. Randall Lee +9 more
TL;DR: In this article, the preparation of dialkyl-substituted poly(2,5-didecyl-1,4-phenylene vinylene) (PDDPV) by the Horner-Emmons polycondensation is described.
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Compositions of surface layers formed on amalgams in air, water, and saline.
TL;DR: Among the elements contained in amalgam, zinc was the most reactive with the environment, and was preferentially dissolved from amalgam into water or saline, and the formation of the surface layer on the zinc-containing amalgam was affected by the environment in which it was polished and aged.
Interfacial diffusion studies of Hf and Zr into Si from thermally annealed Hf and Zr silicates
Manuel Quevedo-Lopez,M. El-Bouanani,Bruce E. Gnade,Luigi Colombo,M. J. Bevan,M. Douglas,Mark R. Visokay,Robert M. Wallace +7 more
TL;DR: Hf and Zr incorporation from thermally annealed high-κ gate dielectric thin films (4-5 nm) candidates into Si are presented in this paper, where the dielectrics were subjected either to rapid thermal annealing (RTA) or standard furnace annaling in an N2 atmosphere, and the films were removed by chemical etching prior to depth profiling using both time of flight secondary ion mass spectroscopy (ToF-SIMS), and Heavy Ion Rutherford Backscattering Spectrometry (HI-RBS) combined with UV-
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Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉
Z. Y. Zhao,A.M. Arrale,S. L. Li,D.K. Marble,Duncan L. Weathers,S. Matteson,J.M. Anthony,Bruce E. Gnade,Floyd D. McDaniel +8 more
TL;DR: In this article, experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si-100 µV was discussed. But the transition was not discussed in this paper.