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Byoung-June Kim
Researcher at Samsung
Publications - 32
Citations - 1496
Byoung-June Kim is an academic researcher from Samsung. The author has contributed to research in topics: Layer (electronics) & Thin-film transistor. The author has an hindex of 12, co-authored 32 publications receiving 1490 citations.
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Patent
Thin film transitor substrate and method of manufacturing the same
Sung-Ryul Kim,Sung-Hoon Yang,Byoung-June Kim,Czang-Ho Lee,Jae-Ho Choi,Hwa-Yeul Oh,Yong-Mo Choi +6 more
TL;DR: In this paper, a method of manufacturing a thin-film transistor (TFT) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first pattern group, forming an amorphous silicon layer and an oxide semiconductor layer, and forming a protection layer including a contact hole on the second pattern group.
Patent
Photoelectric conversion device and manufacturing method thereof
Min-Seok Oh,Jung-tae Kim,Nam-Kyu Song,Min Park,Yun-Seok Lee,Czang-Ho Lee,Myung-Hun Shin,Byoung-Kyu Lee,Yuk-Hyun Nam,Seung-jae Jung,Mi-Hwa Lim,Joon-Young Seo,Dong-uk Choi,Dongseop Kim,Byoung-June Kim +14 more
TL;DR: In this paper, a photoelectric conversion device having a semiconductor substrate (10) including a front side and back side, a protective layer (60), a non-single crystalline semiconductor layer (20), and a conductive layer (30), including the first impurity and a second impurity formed on a second portion of the back side of the first non-Single crystalline polysilicon (SLS) layer was presented.
Patent
Thin film transistor array panel and method for manufacturing the same
TL;DR: In this paper, a TFT array panel including a substrate, a gate line having a gate electrode, gate insulating layer formed on the gate line, a data line with a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed between the data line and the drain electrode, and a pixel electrode connected to the drain electrodes is provided.
Journal ArticleDOI
Material properties of microcrystalline silicon for solar cell application
Czang-Ho Lee,Myung-Hun Shin,Mi-Hwa Lim,Jun-Yong Seo,Jung-eun Lee,Hee-Yong Lee,Byoung-June Kim,Dong-uk Choi +7 more
TL;DR: In this article, the material requirements of microcrystalline silicon (μc-Si) in terms of the device operation and configuration for thin film solar cells and thin film transistors (TFTs) were reviewed.
Journal ArticleDOI
Low-refractive-index and high-transmittance silicon oxide with a mixed phase of n-type microcrystalline silicon as intermediate reflector layers for tandem solar cells
TL;DR: In this paper, a low-refractive-index and high-transmittance silicon oxide (SiO x ) with a mixed phase of n-type microcrystalline silicon was developed for intermediate reflector layers (IRLs) of high-efficiency amorphous Si and micro-crystaline-Si tandem solar cells, and the refractive index, crystalline fraction, and conductivity of the SiO x IRLs were characterized as functions of the deposition conditions.