Byoung-June Kim

TL;DR: In this paper, a method of manufacturing a thin-film transistor (TFT) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first pattern group, forming an amorphous silicon layer and an oxide semiconductor layer, and forming a protection layer including a contact hole on the second pattern group.

TL;DR: In this paper, a photoelectric conversion device having a semiconductor substrate (10) including a front side and back side, a protective layer (60), a non-single crystalline semiconductor layer (20), and a conductive layer (30), including the first impurity and a second impurity formed on a second portion of the back side of the first non-Single crystalline polysilicon (SLS) layer was presented.

TL;DR: In this paper, a TFT array panel including a substrate, a gate line having a gate electrode, gate insulating layer formed on the gate line, a data line with a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed between the data line and the drain electrode, and a pixel electrode connected to the drain electrodes is provided.

TL;DR: In this article, the material requirements of microcrystalline silicon (μc-Si) in terms of the device operation and configuration for thin film solar cells and thin film transistors (TFTs) were reviewed.

TL;DR: In this paper, a low-refractive-index and high-transmittance silicon oxide (SiO x ) with a mixed phase of n-type microcrystalline silicon was developed for intermediate reflector layers (IRLs) of high-efficiency amorphous Si and micro-crystaline-Si tandem solar cells, and the refractive index, crystalline fraction, and conductivity of the SiO x IRLs were characterized as functions of the deposition conditions.