http://nathan.instras.com/documentDB/paper-44.pdf

Surface photovoltage phenomena: theory, experiment, and applications

We present a comprehensive review of the material properties of cadmium zinc telluride (CZT, Cd1ˇxZnxTe) with zinc content xa 0:1‐0.2. Particular emphasis is placed on those aspects of this material related to room temperature nuclear detectors. A review of the structural properties, charge transport, and contacting issues and how these are related to detector and spectrometer performance is presented. A comprehensive literature survey and bibliography are also included. # 2001 Elsevier Science B.V. All rights reserved.

Cadmium zinc telluride and its use as a nuclear radiation detector material

A method to deduce energy distributions of defects in the band gap of a semiconductor by measuring the complex admittance of a junction is proposed. It consists of calculating the derivative of the junction capacitance with respect to the angular frequency of the ac signal corrected by a factor taking into account the band bending and the drop of the ac signal over the space charge region of the junction. Numerical modeling demonstrates that defect distributions in energy can be reconstructed by this method with high accuracy. Defect distributions of polycrystalline Cu(In,Ga)Se2 thin films are determined by this method from temperature dependent admittance measurements on heterojunctions of Cu(In,Ga)Se2 with ZnO that are used as efficient thin film solar cells.

Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions

Many physical phenomena are described by first-order differential equations whose solution is an exponential decay. Determining the time constants and amplitudes of exponential decays from the experimental data is a common task in semiconductor physics (deep level transient spectroscopy), biophysics (fluorescence decay analysis), nuclear physics and chemistry (radioactive decays, nuclear magnetic resonance), chemistry and electrochemistry (reaction kinetics) and medical imaging. This review article discusses the fundamental mathematical limitations of exponential analysis, outlines the critical aspects of acquisition of exponential transients for subsequent analysis, and gives a comprehensive overview of numerical algorithms used in exponential analysis. In the first part of the article the resolution of exponential analysis as a function of noise in input decays is discussed. It is shown that two exponential decays can be resolved in a transient only if the ratio of their time constants is greater than t...

Exponential analysis in physical phenomena

We discuss the potential benefits of using compound semiconductors for the detection of X- and γ-ray radiation. While Si and Ge have become detection standards for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by one or more of their physical limitations; namely the need for ancillary cooling systems or bulky cryogenics, their modest stopping powers and radiation intolerance. Compound semiconductors encompass such a wide range of physical properties that it is technically feasible to engineer a material to any application. Wide band-gap compounds offer the ability to operate in a wide range of thermal and radiation environments, whilst still maintaining sub-keV spectral resolution at hard X-ray wavelengths. Narrow band-gap materials, on the other hand, offer the potential of exceeding the spectral resolution of both Si and Ge, by as much as a factor of 3. Assuming that the total system noise can be reduced to a level commensurate with Fano noise, spectroscopic detectors could work in the XUV, effectively bridging the gap between the ultraviolet and soft X-ray wavebands. Thus, in principle, compound semiconductor detectors can provide continuous spectroscopic coverage from the far infrared through to γ-ray wavelengths. However, while they are routinely used at infrared and optical wavelengths, in other bands, their development has been plagued by material and fabrication problems. This is particularly true at hard X- and γ-ray wavelengths, where only a few compounds (e.g., GaAs, CdZnTe and HgI 2 ) have evolved sufficiently to produce working detection systems. In this paper, we examine the current status of research in compound semiconductors and by a careful examination of material properties and future requirements, recommend a number of compounds for further development. In the longer term, when material problems are sufficiently under control, we believe the future lies in the development of heterostructures and inserted interface layers to overcome contacting problems and quantum heterostructures and superlattices to facilitate low-noise readout.

Compound Semiconductor Radiation Detectors

The traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used together with an appropriate segregation model to calculate axial distributions of resistivity which are compared with spatially resolved resistivity measurements. The Te-antisite defect is discussed as a possible origin cause of this intrinsic defect, which is also supported by theoretical calculations.

Modified compensation model of CdTe

Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors

A detailed analysis of the photoinduced current transients of differently grown CdTe:Cl samples was performed in the 100–140 K range in order to investigate the influence of different growth techniques (sublimation, Bridgman method, and traveling heater method) on compensation defects. While studying the experimental results the analysis of the transients turned out to be a crucial point. With the conventional two‐gate technique only one trap with misleading trap parameters could be identified in each sample. Analyzing the transients with the regularization method proposed recently [C. Eiche, D. Maier, M. Schneider, D. Sinerius, J. Weese, K. W. Benz, and J. Honerkamp, J. Phys. Condens. Matter 4, 6131 (1992)], three traps could be identified in each sample. Only one of these traps leads to an activation energy and a cross section approximately the same for the different samples. The other two traps of each sample depend on the growth technique.

C. Eiche

Papers

Modified compensation model of CdTe

Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors

Investigation of compensation defects in CdTe:Cl samples grown by different techniques

Studies of the compensation mechanism in CdTe grown from the vapour phase

Radiation detector properties of CdTe0.9Se0.1:Cl crystals grown under microgravity in a rotating magnetic field