Lighting accounts for one-fifth of global electricity consumption1. Single materials with efficient and stable white-light emission are ideal for lighting applications, but photon emission covering the entire visible spectrum is difficult to achieve using a single material. Metal halide perovskites have outstanding emission properties2,3; however, the best-performing materials of this type contain lead and have unsatisfactory stability. Here we report a lead-free double perovskite that exhibits efficient and stable white-light emission via self-trapped excitons that originate from the Jahn–Teller distortion of the AgCl6 octahedron in the excited state. By alloying sodium cations into Cs2AgInCl6, we break the dark transition (the inversion-symmetry-induced parity-forbidden transition) by manipulating the parity of the wavefunction of the self-trapped exciton and reduce the electronic dimensionality of the semiconductor4. This leads to an increase in photoluminescence efficiency by three orders of magnitude compared to pure Cs2AgInCl6. The optimally alloyed Cs2(Ag0.60Na0.40)InCl6 with 0.04 per cent bismuth doping emits warm-white light with 86 ± 5 per cent quantum efficiency and works for over 1,000 hours. We anticipate that these results will stimulate research on single-emitter-based white-light-emitting phosphors and diodes for next-generation lighting and display technologies. After alloying with metal cations, a lead-free halide double perovskite shows stable performance and remarkably efficient white-light emission, with possible applications in lighting and display technologies.

Efficient and stable emission of warm-white light from lead-free halide double perovskites

We present a comprehensive review of the material properties of cadmium zinc telluride (CZT, Cd1ˇxZnxTe) with zinc content xa 0:1‐0.2. Particular emphasis is placed on those aspects of this material related to room temperature nuclear detectors. A review of the structural properties, charge transport, and contacting issues and how these are related to detector and spectrometer performance is presented. A comprehensive literature survey and bibliography are also included. # 2001 Elsevier Science B.V. All rights reserved.

Cadmium zinc telluride and its use as a nuclear radiation detector material

Using first-principles band structure methods we studied the general chemical trends of defect formation in II-VI semiconductors. We systematically calculated the formation energies and transition energy levels of intrinsic and extrinsic defects and defect complexes in the prototype CdTe and investigated the limiting factors for p-type and n-type doping in this material. Possible approaches to significantly increase the doping limits are discussed. Our general understanding of the chemical trends of defect formation energies and transition energy levels in CdTe is expected to be applicable also to other II-VI semiconductors.

Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

Quantum computing is an attractive and multidisciplinary field, which became a focus for experimental and theoretical research during the last decade. Among other systems, such as ions in traps and superconducting circuits, solid state based qubits are considered to be promising candidates for use in first experimental tests of quantum hardware. Here we report recent progress in quantum information processing with point defects in diamond. Qubits are defined as single spin states (electron or nuclear). This allows exploration of long coherence times (up to seconds for nuclear spins at cryogenic temperatures). In addition, the optical transition between ground and excited electronic states allows coupling of spin degrees of freedom to the state of the electromagnetic field. Such coupling gives access to spin state read-out via spin-selective scattering of photons. This also allows the use of spin states as robust memory for flying qubits (photons).

https://iopscience.iop.org/article/10.1088/0953-8984/18/21/S08/pdf

Processing quantum information in diamond

Photoluminescence is a radiative recombination process of electron-hole pairs. Self-trapped excitons (STEs), occurring in a material with soft lattice and strong electron-phonon coupling, emit photons with broad spectrum and large Stokes shift. Recently, series halide perovskites with efficient STE emission have been reported and showed promise for solid-state lighting. In this Perspective, we present an overview of various photoluminescence phenomena with the emphasis on the mechanism and characteristics of emission derived from STEs. This is followed by the introduction of STE emission in hybrid halide perovskites. We then introduce all-inorganic STE emitters and focus in particular on the mechanism of STEs in double-perovskite Cs2AgInCl6 and strategies for efficiency improvement. Finally, we summarize the current photoluminescence and electroluminescence applications of STE emitters as well as the potential in luminescent solar concentrators and provide an overview of future research opportunities.

Self-Trapped Excitons in All-Inorganic Halide Perovskites: Fundamentals, Status, and Potential Applications

We investigated the optical properties of defects in CdTe and ${\mathrm{Cd}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Zn}}_{\mathit{x}}$Te (0x1). Residual impurities give rise to specific far infrared absorptions, while metal vacancy-donor complexes (A centers), identified by optically detected magnetic resonance, are characterized by their near infrared (1.4 eV) photoluminescence (PL) properties. The specific zero-phonon-line positions and phonon couplings are worked out for these complexes involving different group-VII (F, Cl, Br, In) or group-III (In, Al) donors. In addition to the A center PL two emission bands are found at 1.135 and at 1.145 eV. The temperature dependences of the PL show that the 1.145 eV luminescence follows the temperature dependence of the band gap, while the energy position of the 1.135 eV band emission shifts to higher energies with increasing temperature. The A-center PL and the luminescence bands at 1.1 eV are investigated throughout the complete alloy composition range form x=0 to 1. The A center and the 1.135 eV band were found to follow the band-gap shift from CdTe to ZnTe, whereas the 1.145 eV luminescence keeps its emission energy constant.

Optical investigations of defects in Cd1-xZnxTe.

The traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used together with an appropriate segregation model to calculate axial distributions of resistivity which are compared with spatially resolved resistivity measurements. The Te-antisite defect is discussed as a possible origin cause of this intrinsic defect, which is also supported by theoretical calculations.

Modified compensation model of CdTe

Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors

Native defect identification in II–VI materials

The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd 1− x Zn x Te as obtained by electron paramagnetic resonance and related techniques is reviewed. Special attention will be paid to the properties of intrinsic defects such as vacancies (V Cd and V Te ) and complexes formed with dopants (A centres: V Cd -donor, and donor-V Cd -donor complexes). In view of the high resistive material required for X- and γ-ray detector applications such defects seem to play an important role.

W. Stadler

Papers

Optical investigations of defects in Cd1-xZnxTe.

Modified compensation model of CdTe

Comparison of CdTe, Cd0.9Zn0.1Te and CdTe0.9Se0.1 crystals: application for γ- and X-ray detectors

Native defect identification in II–VI materials

Defects in CdTe and Cd1−xZnxTe