Journal ArticleDOI
Modified compensation model of CdTe
Michael Fiederle,C. Eiche,M. Salk,R. Schwarz,Klaus-Werner Benz,W. Stadler,D. M. Hofmann,Bruno K. Meyer +7 more
TLDR
In this paper, a new compensation model based on a deep intrinsic donor level is presented, which is used together with an appropriate segregation model to calculate axial distributions of resistivity which are compared with spatially resolved resistivity measurements.Abstract:
The traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used together with an appropriate segregation model to calculate axial distributions of resistivity which are compared with spatially resolved resistivity measurements. The Te-antisite defect is discussed as a possible origin cause of this intrinsic defect, which is also supported by theoretical calculations.read more
Citations
More filters
Journal ArticleDOI
Tellurium antisites in CdZnTe
TL;DR: In this article, the conduction type of CdZnTe crystals is determined by the results of compensation between the shallow donors of Te antisites and the shallow acceptors of cd vacancies.
Journal ArticleDOI
Study on Instability Phenomena in CdTe Diode-Like Detectors
TL;DR: In this article, the authors investigated the physical mechanisms underlying the degradation of In/CdTe/Pt detectors when operated at room temperature, by studying the evolution of the space charge inside the detector.
Journal ArticleDOI
What Causes High Resistivity in CdTe
Koushik Biswas,Mao-Hua Du +1 more
TL;DR: In this article, the authors presented the calculations on carrier statistics and energetics of shallow donors and native defects in CdTe and showed that the shallow donor can be used to reliably obtain high resistivity.
Journal ArticleDOI
Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector Crystals
TL;DR: In this article, the compensation mechanism and the influence on the transport properties of CdTe and (Cd,Zn)Te crystals were studied and the highest values were obtained for In doped Cd, ZnTe with 3.3 /spl times/ 10/sup -3/ cm/sup 2//V.
Journal ArticleDOI
What causes high resistivity in CdTe
Koushik Biswas,Mao-Hua Du +1 more
TL;DR: In this article, the authors show that the shallow donor can be used to reliably obtain high resistivity in CdTe without requiring additional deep donors and demonstrate different donor-specific mechanisms for achieving carrier compensation.
References
More filters
Journal ArticleDOI
Kinetics of Phase Change. I General Theory
TL;DR: In this paper, the theory of phase change is developed with the experimentally supported assumptions that the new phase is nucleated by germ nuclei which already exist in the old phase, and whose number can be altered by previous treatment.
Journal ArticleDOI
The redistribution of solute atoms during the solidification of metals
TL;DR: In this article, a quantitative analysis of the redistribution of solute resulting from solidification in the absence of convection of a binary solution for transient and steady state conditions is made, where diffusion in the liquid is taken into account and shown to be of importance in determining the solute distribution in both the liquid and the solid.
Book
Semiconductors for room temperature nuclear detector applications
T. Ehud Schlesinger,R. B. James +1 more
TL;DR: In this article, the authors present a detailed overview of the development and application of CdTe detectors in the field of X-ray and gamma-ray detectors and their applications.
Journal ArticleDOI
Compensation mechanisms in GaAs
TL;DR: In this paper, a set of curves are given which allow the determination of ND•NA, the concentration of shallow donors and acceptors, knowing the Hall mobility and the Cr concentration in a given sample.