C. Jagannath

TL;DR: In this article, passive alignment of semiconductor lasers and single-mode fibres has been achieved using a micromachined silicon subtrate, which offers the potential for low-cost optoelectronic device packaging and a means for dense hybrid integration of optical components required for multifibre, multichip systems.

TL;DR: In this paper, high-energy electron diffraction (RHEED) intensity oscillations have been used during molecular beam epitaxy (MBE) to accurately determine threshold layer thicknesses for two-dimensional (2D) growth of InxGa1−xAs/GaAs on GaAs for a wide range of substrate temperatures and indium compositions.

TL;DR: In this paper, the growth of a quantum well active region that is highly lattice-mismatched relative to a substrate is considered and a buffer layer having a thickness above a critical value is grown on the substrate whereby the stress due to a lattice constant mismatch between the buffer layer and substrate is relieved through the formation of misfit dislocations.

TL;DR: In this article, a method of passively aligning optical receiving elements such as fibers to the active elements of a light generating chip includes the steps of forming two front and one side pedestal structures on the surface of a substrate body, defining a vertical sidewall of the chip to form a mating channel having an edge at a predetermined distance from the first active element, mounting the chip epi-side down on the substrate surface, and positioning the fibers in fiber-receiving channels so that a center line of each fiber is aligned to a centre line of a respective active element.

TL;DR: The first observation of the effect of two-dimensional (2D) confinement on the uniaxial stress dependence of excitons in GaAs as quantum wells is reported.