Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

Electrical current can be completely spin polarized in a class of materials known as half-metals, as a result of the coexistence of metallic nature for electrons with one spin orientation and insulating nature for electrons with the other. Such asymmetric electronic states for the different spins have been predicted for some ferromagnetic metals--for example, the Heusler compounds--and were first observed in a manganese perovskite. In view of the potential for use of this property in realizing spin-based electronics, substantial efforts have been made to search for half-metallic materials. However, organic materials have hardly been investigated in this context even though carbon-based nanostructures hold significant promise for future electronic devices. Here we predict half-metallicity in nanometre-scale graphene ribbons by using first-principles calculations. We show that this phenomenon is realizable if in-plane homogeneous electric fields are applied across the zigzag-shaped edges of the graphene nanoribbons, and that their magnetic properties can be controlled by the external electric fields. The results are not only of scientific interest in the interplay between electric fields and electronic spin degree of freedom in solids but may also open a new path to explore spintronics at the nanometre scale, based on graphene.

https://arxiv.org/pdf/cond-mat/0611600.pdf

Half-metallic graphene nanoribbons

Colossal magnetoresistance—a huge decrease in resistance in response to a magnetic field—has recently been observed in manganese oxides with perovskite structure. This effect is attracting considerable interest from both fundamental and practical points of view1. In the context of using this effect in practical devices, a noteworthy feature of these materials is the high degree of spin polarization of the charge carriers, caused by the half-metallic nature of these materials20,21; this in principle allows spin-dependent carrier scattering processes, and hence the resistance, to be strongly influenced by low magnetic fields. This type of field control has been demonstrated for charge-carrier scattering at tunnelling junctions2,3 and at crystal-twin or ceramic grain boundaries4,5, although the operating temperature of such structures is still too low (⩽150 K) for most applications. Here we report a material—Sr2FeMoO6, an ordered double perovskite6—exhibiting intrinsic tunnelling-type magnetoresistance at room temperature. We explain the origin of this behaviour with electronic-structure calculations that indicate the material to be half-metallic. Our results show promise for the development of ordered perovskite magnetoresistive devices that are operable at room temperature.

Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure

The interaction of subpicosecond laser pulses with magnetically ordered materials has developed into a fascinating research topic in modern magnetism. From the discovery of subpicosecond demagnetization over a decade ago to the recent demonstration of magnetization reversal by a single 40 fs laser pulse, the manipulation of magnetic order by ultrashort laser pulses has become a fundamentally challenging topic with a potentially high impact for future spintronics, data storage and manipulation, and quantum computation. Understanding the underlying mechanisms implies understanding the interaction of photons with charges, spins, and lattice, and the angular momentum transfer between them. This paper will review the progress in this field of laser manipulation of magnetic order in a systematic way. Starting with a historical introduction, the interaction of light with magnetically ordered matter is discussed. By investigating metals, semiconductors, and dielectrics, the roles of nearly free electrons, charge redistributions, and spin-orbit and spin-lattice interactions can partly be separated, and effects due to heating can be distinguished from those that are not. It will be shown that there is a fundamental distinction between processes that involve the actual absorption of photons and those that do not. It turns out that for the latter, the polarization of light plays an essential role in the manipulation of the magnetic moments at the femtosecond time scale. Thus, circularly and linearly polarized pulses are shown to act as strong transient magnetic field pulses originating from the nonabsorptive inverse Faraday and inverse Cotton-Mouton effects, respectively. The recent progress in the understanding of magneto-optical effects on the femtosecond time scale together with the mentioned inverse, optomagnetic effects promises a bright future for this field of ultrafast optical manipulation of magnetic order or femtomagnetism.

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Ultrafast optical manipulation of magnetic order

Half-metallic materials are characterized by the coexistence of metallic behaviour for one electron spin and insulating behaviour for the other. Thus, the electronic density of states is completely spin polarized at the Fermi level, and the conductivity is dominated by these metallic single-spin charge carriers. This exotic physical property could have a significant effect on technological applications related to magnetism and spin electronics. Some ferromagnetic systems, such as Heusler compounds1 and chromium dioxide2, have been predicted theoretically to be half-metallic. However, a half-metallic system has not been demonstrated directly and the predictions are still in doubt3,4. Here we report spin-resolved photoemission measurements of a ferromagnetic manganese perovskite, La0.7Sr0.3MnO3, which directly manifest the half-metallic nature well below the Curie temperature. For the majority spin, the photoemission spectrum clearly shows a metallic Fermi cut-off, whereas for the minority spin, it shows an insulating gap with disappearance of spectral weight at ∼0.6 eV binding energy.

Direct evidence for a half-metallic ferromagnet

We report the observation of giant magnetoresistance near room temperature in ferromagnetic films of La1−xSrxMnOz for 0.16≤x≤0.33. For B=5 T, the maximum magnetoresistance ratio [R(0)−R(B)]/R(0) of an annealed film is 60% at 260 K for x=0.2, and 35% at 330 K for x=0.33. Annealed films have higher Curie temperature (Tc), a larger saturation moment and a larger magnetoresistance effect near Tc than do as‐grown films. The temperature dependence of resistivity for all the samples investigated is unusual, activated above Tc and metallic below Tc. This and the giant magnetoresistance are possibly explained by scattering from magnetic polarons which dominate the transport near Tc.

Giant magnetoresistance in La1-xSrxMnOz films near room temperature

We are optimizing thin films of perovskite manganese oxides for bolometric applications. We have studied the relevant material characteristics of several members of this family namely, La0.7Ba0.3MnO3, La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, and Nd0.7Sr0.3MnO3. Here, we discuss issues related to the choice of material, the influence of deposition parameters, and postdeposition heat treatments on the relevant characteristics such as the resistivity-peak temperature (Tp) and the temperature coefficient of resistance (TCR). For a given material, a higher peak temperature implies a larger temperature coefficient of resistance. In contrast, on comparing different material systems, the TCR tends to decrease as Tp increases.

Material characteristics of perovskite manganese oxide thin films for bolometric applications

Stress-induced effects in epitaxial (La0.7Sr0.3)MnO3 films

We report a systematic study of the microstructure and dielectric properties of barium strontium titanate, Ba1−xSrxTiO3, films grown by laser ablation on LaAlO3 substrates, where x=0.1–0.9 at an interval of 0.1. X-ray diffraction analysis shows that when x 0.4, compared with the peak temperatures of the bulk Ba1−xSrxTiO3. At room temperature, the dielectric constant and tunability are relatively high when x⩽0.4 but start to decrease rapidly as x increases.

C. Kwon

Papers

Direct evidence for a half-metallic ferromagnet

Giant magnetoresistance in La1-xSrxMnOz films near room temperature

Material characteristics of perovskite manganese oxide thin films for bolometric applications

Stress-induced effects in epitaxial (La0.7Sr0.3)MnO3 films

Microstructure and dielectric properties of Ba1−xSrxTiO3 films grown on LaAlO3 substrates