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C.L. Mitsas
Researcher at Aristotle University of Thessaloniki
Publications - 13
Citations - 131
C.L. Mitsas is an academic researcher from Aristotle University of Thessaloniki. The author has contributed to research in topics: Thin film & Infrared spectroscopy. The author has an hindex of 7, co-authored 13 publications receiving 125 citations.
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Journal ArticleDOI
Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films
D. H. Tassis,C.L. Mitsas,Triantafillia Zorba,Charalabos A. Dimitriadis,O. Valassiades,D. I. Siapkas,Mavroeidis Angelakeris,Panagiotis Poulopoulos,N. K. Flevaris,George Kiriakidis +9 more
TL;DR: In this paper, a polycrystalline semiconducting FeSi2 thin films were grown on (100) Si substrates of high resistivity by electron beam evaporation of amorphous Si/Fe ultrathin multilayers in an ultrahigh vacuum system, followed by conventional vacuum furnace (CF) or rapid thermal annealing (RTA).
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Optical and electrical characterization of high quality β-FeSi2 thin films grown by solid phase epitaxy
D. H. Tassis,C.L. Mitsas,Triantafillia Zorba,Mavroeidis Angelakeris,Charalabos A. Dimitriadis,O. Valassiades,D. I. Siapkas,George Kiriakidis +7 more
TL;DR: In this article, high quality β-FeSi 2 thin films were grown on Si-100- substrates by UHV electron beam evaporation of α-Si/Fe multilayers and annealed by conventional vacuum furnace and rapid thermal techniques.
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Synthesis and characterization of LiMn2O4 for use in Li-ion batteries
D. I. Siapkas,C.L. Mitsas,I. Samaras,Triantafillia Zorba,George Moumouzias,D. Terzidis,Euripides Hatzikraniotis,S. Kokkou,Anastasios Voulgaropoulos,Konstantinos M. Paraskevopoulos +9 more
TL;DR: In this paper, Li 1.05 Mn 2 O 4 prepared at 730°C showed high Li utilization, excellent cyclability and good rate capability with an initial discharge capacity of 123 mA h/g and 10% discharge capacity reduction after 20 cycles.
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Growth, Electrical, and Optical Properties of TlBiSe2 Single Crystals
C.L. Mitsas,D. I. Siapkas,Efstathios K. Polychroniadis,O. Valassiades,Konstantinos M. Paraskevopoulos +4 more
TL;DR: In this article, the dispersion of the free carrier properties is determined by employing electrical and IR reflectivity measurements, in an attempt to probe the band structure of the material but also to lay down the groundwork for the characterization of epitaxial thin films of this material.
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An infrared study of Ge+ implanted SiC
Triantafillia Zorba,C.L. Mitsas,I.D. Siapkas,G.Z. Terzakis,D. I. Siapkas,Y. Pacaud,Wolfgang Skorupa +6 more
TL;DR: In this article, the damage produced by 200 keV Ge + ion implantation in 6H-SiC (from Cree Research) has been studied by fast Fourier transform infrared (IR) reflectance spectroscopy.