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C. S. Suchand Sangeeth

Researcher at National University of Singapore

Publications -  36
Citations -  1136

C. S. Suchand Sangeeth is an academic researcher from National University of Singapore. The author has contributed to research in topics: Carbon nanotube & Graphene. The author has an hindex of 18, co-authored 35 publications receiving 955 citations. Previous affiliations of C. S. Suchand Sangeeth include Indian Institute of Science.

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Equivalent Circuits of a Self-Assembled Monolayer-Based Tunnel Junction Determined by Impedance Spectroscopy

TL;DR: In this article, the authors show that frequency-dependent AC measurements, impedance spectroscopy, make it possible to separate the contribution of each component from each other, e.g., the molecule-electrode contacts, protective layer (if present), or the SAM, to the electrical characteristics of the junctions.
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Correlation of morphology and charge transport in poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT-PSS) films

TL;DR: In this article, a wide variation in the charge transport properties of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) films is attributed to the degree of phase segregation of the excess insulating polyanion.
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Reversible Soft Top‐Contacts to Yield Molecular Junctions with Precise and Reproducible Electrical Characteristics

TL;DR: In this article, a method to construct tunnel junctions based on self-assembled monolayers (SAMs) by forming reversible electrical contacts to SAMs using top-electrodes of a non-Newtonian liquid-metal (GaOx/EGaIn) stabilized in a microfluidic-based device is described.
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Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

TL;DR: The plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers, which should be applicable to other types of stacked two-dimensional films.
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The Origin of the Odd-Even Effect in the Tunneling Rates across EGaIn Junctions with Self-Assembled Monolayers (SAMs) of n-Alkanethiolates.

TL;DR: The odd-even effects in SAM-based tunnel junctions of the form Ag(A-TS)-SC(n)//GaO(x)/EGaIn junctions are attributed to the properties of the SAMs and SAM-electrode interactions which both determine the shape of the tunneling barrier.