We report a study of the oxidation of TiN. In previous work, the oxidation kinetics for 350–450 °C were reported and an initiation time prior to fast oxidation was identified. In this study, x‐ray photoelectron spectroscopy was used to investigate the oxidation mechanisms at 350 °C during this initiation time period. The oxide thickness increases slowly with oxidation time and the film appears to change from an amorphous TiO2 layer to a crystalline TiO2 layer. Spectral features which are intermediate between TiO2 and TiN are reported and a model involving grain boundary oxidation is proposed. One of the thicker oxides studied was annealed in vacuum to 700 °C. Following oxidation, some of the capping oxide and much of the intermediate material is no longer in the analysis volume and we suggest that the oxygen and nitrogen is being dissolved into the bulk in much the same way that nonevaporable getters are activated before use.

Titanium nitride oxidation chemistry: An x‐ray photoelectron spectroscopy study

Part I: Background and Fundamentals Introduction, Mohamed Gad-el-Hak, University of Notre Dame Scaling of Micromechanical Devices, William Trimmer, Standard MEMS, Inc., and Robert H. Stroud, Aerospace Corporation Mechanical Properties of MEMS Materials, William N. Sharpe, Jr., Johns Hopkins University Flow Physics, Mohamed Gad-el-Hak, University of Notre Dame Integrated Simulation for MEMS: Coupling Flow-Structure-Thermal-Electrical Domains, Robert M. Kirby and George Em Karniadakis, Brown University, and Oleg Mikulchenko and Kartikeya Mayaram, Oregon State University Liquid Flows in Microchannels, Kendra V. Sharp and Ronald J. Adrian, University of Illinois at Urbana-Champaign, Juan G. Santiago and Joshua I. Molho, Stanford University Burnett Simulations of Flows in Microdevices, Ramesh K. Agarwal and Keon-Young Yun, Wichita State University Molecular-Based Microfluidic Simulation Models, Ali Beskok, Texas A&M University Lubrication in MEMS, Kenneth S. Breuer, Brown University Physics of Thin Liquid Films, Alexander Oron, Technion, Israel Bubble/Drop Transport in Microchannels, Hsueh-Chia Chang, University of Notre Dame Fundamentals of Control Theory, Bill Goodwine, University of Notre Dame Model-Based Flow Control for Distributed Architectures, Thomas R. Bewley, University of California, San Diego Soft Computing in Control, Mihir Sen and Bill Goodwine, University of Notre Dame Part II: Design and Fabrication Materials for Microelectromechanical Systems Christian A. Zorman and Mehran Mehregany, Case Western Reserve University MEMS Fabrication, Marc J. Madou, Nanogen, Inc. LIGA and Other Replication Techniques, Marc J. Madou, Nanogen, Inc. X-Ray-Based Fabrication, Todd Christenson, Sandia National Laboratories Electrochemical Fabrication (EFAB), Adam L. Cohen, MEMGen Corporation Fabrication and Characterization of Single-Crystal Silicon Carbide MEMS, Robert S. Okojie, NASA Glenn Research Center Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide, Glenn M. Beheim, NASA Glenn Research Center Microfabricated Chemical Sensors for Aerospace Applications, Gary W. Hunter, NASA Glenn Research Center, Chung-Chiun Liu, Case Western Reserve University, and Darby B. Makel, Makel Engineering, Inc. Packaging of Harsh-Environment MEMS Devices, Liang-Yu Chen and Jih-Fen Lei, NASA Glenn Research Center Part III: Applications of MEMS Inertial Sensors, Paul L. Bergstrom, Michigan Technological University, and Gary G. Li, OMM, Inc. Micromachined Pressure Sensors, Jae-Sung Park, Chester Wilson, and Yogesh B. Gianchandani, University of Wisconsin-Madison Sensors and Actuators for Turbulent Flows. Lennart Loefdahl, Chalmers University of Technology, and Mohamed Gad-el-Hak, University of Notre Dame Surface-Micromachined Mechanisms, Andrew D. Oliver and David W. Plummer, Sandia National Laboratories Microrobotics Thorbjoern Ebefors and Goeran Stemme, Royal Institute of Technology, Sweden Microscale Vacuum Pumps, E. Phillip Muntz, University of Southern California, and Stephen E. Vargo, SiWave, Inc. Microdroplet Generators. Fan-Gang Tseng, National Tsing Hua University, Taiwan Micro Heat Pipes and Micro Heat Spreaders, G. P. "Bud" Peterson, Rensselaer Polytechnic Institute Microchannel Heat Sinks, Yitshak Zohar, Hong Kong University of Science and Technology Flow Control, Mohamed Gad-el-Hak, University of Notre Dame) Part IV: The Future Reactive Control for Skin-Friction Reduction, Haecheon Choi, Seoul National University Towards MEMS Autonomous Control of Free-Shear Flows, Ahmed Naguib, Michigan State University Fabrication Technologies for Nanoelectromechanical Systems, Gary H. Bernstein, Holly V. Goodson, and Gregory L. Snider, University of Notre Dame Index

The MEMS Handbook

Structure and properties of TiN coatings

This paper provides an overview on the current understanding of electromigration in metals. The discussion is first focused on studies in bulk metals and alloys. This part includes a thermodynamic formulation of electromigration, a kinetic analysis of the atomic processes and a review of the theory. In addition, experimental results in interstitial and substitutional systems are summarised. The second part of the paper reviews the studies in metallic thin films. This emerged as an important area of electromigration studies since the late 1960s when electromigration damage was found to cause failure of conductor lines in integrated circuits. The discussion will review first the basic nature of electromigration in thin films with emphasis on the role of grain boundaries in mass transport and damage formation. Then the materials issues of electromigration will be explored according to the scaling trends in VLSI technology. Finally, the recent results of electromigration in fine lines and device contacts of dimensions in the micrometre range are discussed.

https://iopscience.iop.org/article/10.1088/0034-4885/52/3/002/pdf

C.Y. Ting

Papers

The use of titanium-based contact barrier layers in silicon technology

Investigation of Tin films reactively sputtered using a sputter gun

TiN as a high temperature diffusion barrier for arsenic and boron