Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

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Fundamentals of Modern VLSI Devices

Materials research plays a vital role in transforming breakthrough scientific ideas into next-generation technology. Similar to the way silicon revolutionized the microelectronics industry, the proper materials can greatly impact the field of plasmonics and metamaterials. Currently, research in plasmonics and metamaterials lacks good material building blocks in order to realize useful devices. Such devices suffer from many drawbacks arising from the undesirable properties of their material building blocks, especially metals. There are many materials, other than conventional metallic components such as gold and silver, that exhibit metallic properties and provide advantages in device performance, design flexibility, fabrication, integration, and tunability. This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskite oxides, metal nitrides, silicides, germanides, and 2D materials such as graphene. This review provides a summary of the recent developments in the search for better plasmonic materials and an outlook of further research directions.

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Alternative Plasmonic Materials: Beyond Gold and Silver

Thermodynamic and kinetic aspects of the crystal to glass transformation in metallic materials

Ordered magnetic nanostructures: fabrication and properties

Structure and properties of TiN coatings

Interfacial reaction in bilayers of amorphous Si and crystalline Rh thin films has been studied by transmission electron diffraction and microscopy. In a bilayer of ∼190‐A amorphous Si and ∼60‐A polycrystalline Rh films, we have observed the formation of an amorphous Rh‐Si alloy film upon thermal annealing at 300 °C. The amorphous alloy film crystallizes into the RhSi phase at 400 °C. On the other hand, no amorphous alloy formation was observed upon annealing a bilayer of ∼150‐A amorphous Si and ∼100‐A polycrystalline Rh films; instead, they react at 300 °C to form Rh2Si, followed by the formation of RhSi or a mixture of RhSi and Rh5Si3 around 400 °C.

Formation of an amorphous Rh‐Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films

Investigation of Tin films reactively sputtered using a sputter gun

The coercivity of narrow stripes of 81 percent Ni-19 percent Fe films has been found to increase rapidly, by up to an order of magnitude, as the stripe width decreases and approaches 1 μm. Furthermore, the coercivity increases with decreasing film thickness as it does in sheet films, but in the stripes the changes in coercivity with film thickness are much larger than in sheet films. For example, in stripes of 2 μm × 100 μm, H c increases from 10 Oe to 35 Oe as the thickness decreases from 1800 A to 300 A. The increase in coercivity with decreasing stripe width may be explained by a buckling of the magnetization perpendicular to the length of the stripe. This buckling process was made visible by decoration of domain walls with Ferrofluid, and is shown to lead to the formation of walls perpendicular to the stripe. These walls do not move, but block reverse domains from propagating down the stripe. In the narrowest stripes (2 μm) fields larger than 100 Oe are required to collapse the 360° wall segments which eventually form. A theoretical model for this buckling process is given which shows that a minimum in energy occurs when the stripe buckles with a buckling wavelength approximately equal to the width of the stripe. These findings suggest that, as structures of NiFe like those in magnetic bubble devices and in magnetic recording heads are made smaller, coercivity and dispersion will rise significantly, leading in many cases to undesirable magnetic behavior.

Magnetic properties and domain structures in narrow NiFe stripes

The surface of a magnetic recording disk is encoded with optically sensed indicia, which is employed to control track following of the read/write slider head along a track on a magnetic recording medium such as a disk. The means of reading the medium is to employ a laser carried by the slider which cooperates with the medium as a reflector which affects the lasing function or modulates the operating characteristics of the laser diode. The retro-reflected light changes the operating voltage of the diode. Preferably, the disk is coated with a multiple layer optical recording medium deposited upon the upper surface of the magnetic recording medium.

Optical servo for magnetic disks

Films of EuO have been vacuum deposited by three techniques: electron beam heating of bulk EuO, simultaneous deposition of Eu and Eu 2 O 3 , and evaporation of Eu in a partial pressure of oxygen. X-ray measurements show the structure of these films to be essentially the same as bulk EuO. The Faraday rotation of EuO films was measured at 5° K for wavelengths between 0.5μ and 1.2μ. The largest specific Faraday rotation occurs at a wavelength of 0.66μ and is 5 × 105degrees per cm, which is one of the highest values yet reported for any material. From magneto-optical measurements and force balance measurements, various magnetic properties of these films have been determined and compared with bulk EuO. Magnetic moment, susceptibility, and squareness of EuO films do not differ greatly from bulk. The coercive force, however, is several times bulk value, and appears to be related to stress in the films.

Kie Y. Ahn

Papers

Formation of an amorphous Rh‐Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films

Investigation of Tin films reactively sputtered using a sputter gun

Magnetic properties and domain structures in narrow NiFe stripes

Optical servo for magnetic disks

Preparation and properties of EuO films