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Cecile Grezes

Researcher at University of California, Los Angeles

Publications -  35
Citations -  1830

Cecile Grezes is an academic researcher from University of California, Los Angeles. The author has contributed to research in topics: Qubit & Flux qubit. The author has an hindex of 18, co-authored 29 publications receiving 1540 citations. Previous affiliations of Cecile Grezes include DSM & Centre national de la recherche scientifique.

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Hybrid Quantum Circuit with a Superconducting Qubit Coupled to a Spin Ensemble

TL;DR: Using a hybrid quantum circuit combining a superconducting qubit and an ensemble of electronic spins, a superposition of the qubit states is prepared that is stored into collective excitations of the spin ensemble and retrieved back into the qubits later on.
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Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

TL;DR: In this article, the authors reported electric field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJ) with high resistance-area product and diameters down to 50 nm.
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Flux Qubits with Long Coherence Times for Hybrid Quantum Circuits

TL;DR: Measurements of superconducting flux qubits embedded in a three dimensional copper cavity show a significant improvement over previous works, which opens the way to the coherent coupling of a flux qubit to individual spins.
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Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling

TL;DR: In this article, the authors present results on voltage-induced switching of magnetic tunnel junctions in both resonant (precessional) and thermally activated regimes, which demonstrate fast (sim 1.5{-}2~{\rm V}$ ).
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Quantum memory for microwave photons in an inhomogeneously broadened spin ensemble.

TL;DR: It is shown that a memory based on nitrogen vacancy center spins in diamond can store a qubit encoded on the |0> and |1> Fock states of the field with 80% fidelity and outperform classical memory strategies for storage times ≤69 μs.