Changhee Lee

TL;DR: Highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer are reported.

TL;DR: This work finds that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents, and demonstrates two specific approaches using heterostructured quantum dots.

TL;DR: Bright, efficient, and environmentally benign InP quantum dot (QD)-based light-emitting diodes (QLEDs) are demonstrated through the direct charge carrier injection into QDs and the efficient radiative exciton recombination within QDs through a comprehensive scheme in designing device architecture and structural formulation of QDs.

TL;DR: In this paper, the authors used the Korea Science and Engineering Foundation (KOSEF) through the Center for Nanotubes and Nanostructured Composites (CNNC) through Acceleration Research Program (R17-2007-059-01000-0.0), NRL Program grant (ROA-2008-000-20108-0) and the NANO Systems Institute-national core research program (NSI-NCRC) (R15-2003-032-02002-0).

TL;DR: In this article, InP@ZnSeS QDs were synthesized with the composition gradient in a radial direction where ZnSe alleviated lattice strain and ZnS protected QDs from degradation so that they achieved high QE and photo/chemical stability.