scispace - formally typeset
C

Changhyun Ko

Researcher at Sookmyung Women's University

Publications -  86
Citations -  8116

Changhyun Ko is an academic researcher from Sookmyung Women's University. The author has contributed to research in topics: Thin film & Phase transition. The author has an hindex of 33, co-authored 78 publications receiving 6698 citations. Previous affiliations of Changhyun Ko include Harvard University & University of California, Berkeley.

Papers
More filters
Journal ArticleDOI

Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition

TL;DR: Results on terahertz (THz) spectroscopy on epitaxial vanadium dioxide (VO(2)) films grown on sapphire across the metal-insulator transition demonstrate an 85% reduction in transmission as the thin film completes its phase transition to the conducting phase, which is much greater than the previous observation.
Journal ArticleDOI

Pressure-induced phase transitions and metallization in VO 2

TL;DR: In this paper, the results of pressure-induced phase transitions and metallization were reported based on synchrotron x-ray diffraction, electrical resistivity, and Raman spectroscopy.
Journal ArticleDOI

Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport.

TL;DR: A new photoactive material that reduces recombination by physically separating hole and electron charge carriers is developed, which enables an unprecedented photoconductive gain of 1010 e− per photon, and allows for effective control of the device response speed by active carrier quenching.
Journal ArticleDOI

Pressure-Temperature Phase Diagram of Vanadium Dioxide.

TL;DR: This work maps out the hydrostatic pressure-temperature phase diagram of vanadium dioxide nanobeams by independently varying pressure and temperature with a diamond anvil cell to delineate their phase boundaries as well as reveal some basic features of the transitions.
Journal ArticleDOI

Studies on electric triggering of the metal-insulator transition in VO 2 thin films between 77 K and 300 K

TL;DR: In this paper, the authors investigate the electrically triggered metal-insulator transition (E-MIT) in VO2 thin films at temperatures far below the structural phase transition temperature (∼340 K).