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Chengbing Qin
Researcher at Shanxi University
Publications - 80
Citations - 839
Chengbing Qin is an academic researcher from Shanxi University. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 11, co-authored 69 publications receiving 521 citations. Previous affiliations of Chengbing Qin include Arizona State University & University of Science and Technology of China.
Papers
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Journal ArticleDOI
Gate tunable giant anisotropic resistance in ultra-thin GaTe.
Hanwen Wang,Mao-Lin Chen,Mao-Lin Chen,Mengjian Zhu,Yaning Wang,Yaning Wang,Baojuan Dong,Baojuan Dong,Xingdan Sun,Xingdan Sun,Xiaorong Zhang,Shimin Cao,Xiaoxi Li,Xiaoxi Li,Jianqi Huang,Jianqi Huang,Lei Zhang,Lei Zhang,Weilai Liu,Weilai Liu,Dong-Ming Sun,Dong-Ming Sun,Yu Ye,Kepeng Song,Jianjian Wang,Yu Han,Teng Yang,Teng Yang,Huaihong Guo,Chengbing Qin,Liantuan Xiao,Jing Zhang,Jian-Hao Chen,Zheng Han,Zheng Han,Zheng Han,Zhidong Zhang,Zhidong Zhang +37 more
TL;DR: In this article, the gate-tunable giant anisotropic resistance effect of few-layer semiconducting GaTe was shown to be gate-table with van der Waals floating gate.
Journal ArticleDOI
Excitons and Biexciton Dynamics in Single CsPbBr3 Perovskite Quantum Dots.
Bin Li,He Huang,Guofeng Zhang,Changgang Yang,Wenli Guo,Ruiyun Chen,Chengbing Qin,Yan Gao,Vasudevan P. Biju,Andrey L. Rogach,Liantuan Xiao,Suotang Jia +11 more
TL;DR: This work conducted spectroscopic studies of the excitons and biexciton dynamics in single CsPbBr3 perovskite quantum dots and found that while the rates of radiative recombination remain essentially constant, the overall relaxation process is dominated by nonradiative recombinations of single exciton and bIExcitons.
Journal ArticleDOI
Gate tunable giant anisotropic resistance in ultra-thin GaTe
Hanwen Wang,Mao-Lin Chen,Mengjian Zhu,Yaning Wang,Baojuan Dong,Xingdan Sun,Xiaorong Zhang,Shimin Cao,Xiaoxi Li,Jianqi Huang,Lei Zhang,Weilai Liu,Dong-Ming Sun,Yu Ye,Teng Yang,Huaihong Guo,Chengbing Qin,Liantuan Xiao,Jing Zhang,Jian-Hao Chen,Zheng Vitto Han,Zhidong Zhang +21 more
TL;DR: The authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tuned up to 103, and demonstrate anisotropic non-volatile memory behavior in ultra-thin GaTe.
Journal ArticleDOI
Atomic-Layered MoS2 as a Tunable Optical Platform
TL;DR: In this article, a review highlights state-of-the-art research on tuning optical properties of atomic-layered MoS2 (including monolayer and few-layer MoS 2), and proposed mechanisms of these modulations are discussed.
Journal ArticleDOI
Suppressing the Fluorescence Blinking of Single Quantum Dots Encased in N-type Semiconductor Nanoparticles.
Bin Li,Guofeng Zhang,Zao Wang,Zhijie Li,Ruiyun Chen,Chengbing Qin,Yan Gao,Liantuan Xiao,Suotang Jia +8 more
TL;DR: An external electron transfer model is proposed to analyze the possible effect of radiative, nonradiative, and electron transfer pathways on fluorescence blinking andoretical analysis based on the model combined with measured results gives a quantitative insight into the blinking mechanism.