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Chia-Hung Lin
Researcher at National Institute of Information and Communications Technology
Publications - 6
Citations - 291
Chia-Hung Lin is an academic researcher from National Institute of Information and Communications Technology. The author has contributed to research in topics: Ion implantation & Doping. The author has an hindex of 4, co-authored 6 publications receiving 151 citations.
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Journal ArticleDOI
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
Man Hoi Wong,Chia-Hung Lin,Akito Kuramata,Shigenobu Yamakoshi,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki +6 more
TL;DR: In this paper, a deep acceptor doping of β-Ga2O3 with Mg and N was demonstrated by implantation of the impurity ions into n-type bulk substrates.
Journal ArticleDOI
Vertical Ga 2 O 3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
Chia-Hung Lin,Yohei Yuda,Man Hoi Wong,Mayuko Sato,Nao Takekawa,Keita Konishi,Tatsuro Watahiki,Mikio Yamamuka,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki +10 more
TL;DR: In this paper, a guard ring (GR) was employed to improve the breakdown voltage (V) of vertical Ga2O3 Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field concentration at the edges of anode and FP electrodes.
Journal ArticleDOI
Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface
Chia-Hung Lin,Naoki Hatta,Keita Konishi,Shinya Watanabe,Akito Kuramata,Kuniaki Yagi,Masataka Higashiwaki +6 more
TL;DR: In this article, a single-crystal β-Ga2O3 substrate was directly attached to a polycrystalline SiC (poly-SiC) substrate using a surface-activated-bonding method to enhance heat extraction.
Journal ArticleDOI
Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities
TL;DR: In this paper, the authors performed Mg- or Fe-ion implantation doping into a Ga2O3 substrate prior to the subsequent molecular-beam epitaxy growth to compensate the accumulated Si donors at the interface.
Proceedings ArticleDOI
Vertical Ga 2 O 3 Schottky Barrier Diodes with Guard Ring Formed by Nitrogen-Ion Implantation
Chia-Hung Lin,Yohei Yuda,Man Hoi Wong,Mayuko Sato,Nao Takekawa,Keita Konishi,Tatsuro Watahiki,Mikio Yamamuka,Hisashi Murakami,Yoshinao Kumagai,Masataka Higashiwaki +10 more
TL;DR: In this article, a guard ring formed by nitrogen-ion implantation doping was employed to improve the breakdown voltage of vertical Ga 2 O 3 Schottky barrier diodes by eliminating electric field concentration at the edges of anode and field-plate (FP) electrodes.