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Chien I. Kuo
Researcher at National Chiao Tung University
Publications - 20
Citations - 179
Chien I. Kuo is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Transconductance & Cutoff frequency. The author has an hindex of 6, co-authored 20 publications receiving 159 citations.
Papers
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Journal ArticleDOI
InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications
TL;DR: In this paper, a high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized.
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Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy
Hung Wei Yu,Edward Yi Chang,Yuji Yamamoto,B. Tillack,B. Tillack,W. C. Wang,Chien I. Kuo,Yuen Yee Wong,Hong Quan Nguyen +8 more
TL;DR: In this article, the growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420°C was investigated.
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InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Amplifier Application
TL;DR: An InAs/In0.7Ga0.3As composite channel high-electron-mobility transistor (HEMT) fabricated using the gate sinking technique was realized for ultralow power-consumption low-noise application.
Journal ArticleDOI
Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes
Hung Wei Yu,Edward Yi Chang,Hong Quan Nguyen,J. T. Chang,Chen-Chen Chung,Chien I. Kuo,Yuen Yee Wong,W. C. Wang +7 more
TL;DR: In this article, the effect of substrate misorientation on the material quality of the N++-GaAs/P++-AlGaAs tunnel diodes (TDs) grown on these substrates is investigated.
Journal ArticleDOI
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
Yu Lin Hsiao,Lung Chi Lu,Chia Hsun Wu,Edward Yi Chang,Chien I. Kuo,Jer-shen Maa,Kung Liang Lin,Tien Tung Luong,Wei Ching Huang,Chia Hua Chang,Chang Fu Dee,Burhanuddin Yeop Majlis +11 more
TL;DR: In this paper, a crack-free GaN film was obtained by patterning Si substrate and optimizing the graded AlxGa1-xN layers, which improved the GaN crystal quality as judged from X-ray diffraction data.