Chris Davies

TL;DR: It is shown that the sharpening of photon, electron and hole distribution functions significantly enhances bimolecular charge recombination as the temperature is lowered, mirroring trends in transient spectroscopy.

TL;DR: In this article, a review spans seminal and recent studies of the electronic properties of nanowires using terahertz (THz) conductivity spectroscopy has emerged as an ideal non-contact technique for probing nanowire electrical conductivity and is showing tremendous value in the targeted development of Nanowire devices.

TL;DR: Optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3 ) thin films, whose background hole doping density is varied through SnF2 addition during film fabrication, suggesting that it is limited mostly by intrinsic interactions with lattice vibrations.

TL;DR: In this article, a scalable method for the deposition of homogeneous FAPbI3 thin films over large areas was proposed, which allows precise control over film thickness and results in highly uniform, pinhole-free layers.

TL;DR: It is shown that GaAs nanowires can be n-type doped with negligible loss of electron mobility and modulation doping significantly enhanced the room-temperature photoconductivity and photoluminescence lifetimes, revealing that modulation doping can passivate interfacial trap states.